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A method to obtain two-dimensional electron gas in sic materials

A technology of two-dimensional electron gas and hexagonal wurtzite, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of low operating frequency, low impurity diffusion coefficient, and high device on-resistance, and achieve reduction Effects of power consumption, increased mobility, and reduced on-state resistance

Active Publication Date: 2018-10-02
厦门紫硅半导体科技有限公司
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AI Technical Summary

Problems solved by technology

These interface states not only reduce the conductive carriers in the channel of SiC-based MOS devices, but also form scattering centers to further reduce the channel mobility, resulting in high on-resistance and low operating frequency of the device.
Even if there are devices such as JFETs to avoid MOS interfaces, since the diffusion coefficient of impurities in SiC is very low, it is often doped by ion implantation, and the activation temperature of implanted ions is quite high, which will cause large crystal damage. Therefore the mobility is not high enough

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  • A method to obtain two-dimensional electron gas in sic materials
  • A method to obtain two-dimensional electron gas in sic materials
  • A method to obtain two-dimensional electron gas in sic materials

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Embodiment 1

[0036] see figure 1 As shown, the present invention provides a method for obtaining a two-dimensional electron gas in a SiC material, comprising the steps of:

[0037] Step 1: Take a SiC substrate 1 with a crystal plane of (0001), the SiC substrate 1 with a crystal plane of (0001) has a hexagonal wurtzite crystal structure, and the crystal plane is a substrate of (0001) 1 is the crystal plane with zero off angle;

[0038] Step 2: Fabricate an AlN layer 2 with a (0001) crystal plane on a SiC substrate 1 with a (0001) crystal plane.

[0039] Wherein the SiC substrate 1 is a semi-insulating material with a thickness of 3-10 μm, and the thickness of the AlN layer 2 is 5nm-50nm, which can be properly n-type doped to compensate for the loss of two-dimensional electrons at the interface of the two materials. The growth method adopted for the deposited material may be one of chemical vapor deposition, physical vapor deposition, and atomic layer deposition.

Embodiment 2

[0041] see figure 2 As shown, the present invention provides a method for obtaining a two-dimensional electron gas in a SiC material, comprising the steps of:

[0042] Step 1: Take a crystal plane as SiC substrate 1, the crystal plane is The SiC substrate 1 has a crystal structure of hexagonal wurtzite, and the crystal planes are The SiC substrate 1 is a crystal plane with zero off-angle;

[0043] Step 2: On the crystal face for An AlN layer 2 with a (0001) crystal plane is fabricated on a SiC substrate 1 .

[0044] Wherein the SiC substrate 1 is a semi-insulating material with a thickness of 3-10 μm, and the thickness of the AlN layer 2 is 5nm-50nm, which can be properly n-type doped to compensate for the loss of two-dimensional electrons at the interface of the two materials. The growth method adopted for the deposited material may be one of chemical vapor deposition, physical vapor deposition, and atomic layer deposition.

Embodiment 3

[0046] see image 3 As shown, the present invention provides a method for obtaining a two-dimensional electron gas in a SiC material, comprising the steps of:

[0047] Step 1: Take a SiC substrate 1 with a crystal plane of (0001), the SiC substrate 1 with a crystal plane of (0001) has a hexagonal wurtzite crystal structure, and the crystal plane is a substrate of (0001) 1 is the crystal plane with zero off angle;

[0048] Step 2: making an AlN layer 2 with a (0001) crystal plane on a SiC substrate 1 with a (0001) crystal plane;

[0049] Step 3: Fabricate Al with (0001) crystal plane on the AlN layer 2 with crystal plane (0001) x Ga 1-x N layer 3, the Al x Ga 1-x The Al composition x in the N layer 3 changes from 0 to 1, that is, the material represents one of AlN, AlGaN, and GaN, that is, when x is 0, it is a GaN material, when x is 1, it is an AlN material, and if 0

[0050] Wherein the SiC substrate 1 is a semi-insulating material with a thickness of ...

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Abstract

The present invention provides a method of obtaining a two-dimensional electron gas in a SiC material. The method comprises the following steps of 1 preparing a SiC substrate of which a crystal face is (0001); 2 manufacturing an AlN layer of which a crystal face is (0001) on the SiC substrate of which the crystal face is (0001). The method of the present invention can be used for the manufacture of a SiC matrix switch device, by being compared with an existing SiC matrix field effect transistor, enables the migration rate of the channel carriers to be improved, thereby reducing the on-resistance of the device and the power consumption.

Description

technical field [0001] The invention relates to a method for obtaining a two-dimensional electron gas, in particular to a method for obtaining a two-dimensional electron gas for SiC materials. Background technique [0002] The third-generation semiconductor silicon carbide (SiC) is a wide bandgap semiconductor material with excellent physical and electrical properties. It has the characteristics of wide band gap, high breakdown field strength, high thermal conductivity, etc., so it is very suitable for the development of high temperature, high power, high frequency power electronic devices. [0003] SiC is currently the only one that can be oxidized to form SiO 2 compound semiconductors, however in SiC and SiO 2 There is a high interface state density at the interface. This is mainly due to the fact that the device gate oxide is formed by oxidizing SiC. During the oxidation process, the C element in SiC is partially oxidized to form CO and CO 2 , leaving more interface s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02378H01L21/0254H01L21/02609
Inventor 申占伟张峰赵万顺王雷闫果果刘兴昉孙国胜曾一平
Owner 厦门紫硅半导体科技有限公司
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