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Radiation-hardened ONO antifuse unit structure and manufacturing method thereof

A cell structure and anti-fuse technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as lack of radiation resistance, improve radiation resistance performance, improve reliability, and process simple effect

Active Publication Date: 2015-11-11
58TH RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the ONO anti-fuse unit with ordinary field isolation does not have good radiation resistance, especially in terms of total dose radiation (TID), which is mainly manifested in the leakage between devices due to the TID radiation effect at the edge of the field region. leakage channel

Method used

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  • Radiation-hardened ONO antifuse unit structure and manufacturing method thereof
  • Radiation-hardened ONO antifuse unit structure and manufacturing method thereof
  • Radiation-hardened ONO antifuse unit structure and manufacturing method thereof

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Embodiment Construction

[0042] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0043] Such as Figure 4 Shown: in order to be able to improve the anti-radiation performance of ONO antifuse unit structure, ONO antifuse unit of the present invention is made on the top layer silicon film 13 of SOI silicon substrate, and is carried out all-dielectric isolation by STI isolation groove 00; STI The N-doped oxide layer 14 covering the sidewall of the isolation trench is SiO x N y , and filled with non-doped polysilicon or amorphous silicon dielectric layer 15; the anti-radiation ONO antifuse unit structure includes the SOI top silicon film as the lower electrode plate of the SOI silicon substrate, and the upper part of the SOI silicon substrate is pr...

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Abstract

The invention relates to a radiation-hardened ONO antifuse unit structure and a manufacturing method thereof, and belongs to the technical field of microelectronics. The radiation-hardened ONO antifuse unit structure comprises an ONO antifuse unit, which is produced on a top silicon film on an SOI silicon substrate and isolated in full-media way by an STI isolating slot. The sidewall of the STI isolating slot is covered by an SiOxNy layer, and the STI isolating slot is filled with non-doped polysilicon or amorphous silicon media. The radiation-hardened ONO antifuse unit structure is simple in manufacture process, which is compatible with CMO process. The radiation-hardened ONO antifuse unit structure is excellent is programming voltage uniformity, short in programming time and low in programming conduction resistance, and has hardened total ionizing dose and single particle capability. The method for manufacturing the radiation-hardened ONO antifuse unit structure is also applicable to bulk silicon CMOS process.

Description

technical field [0001] The invention belongs to the technical field of microelectronic integrated circuits, and relates to an ONO antifuse unit structure and a preparation method thereof, in particular to a radiation-resistant ONO antifuse unit structure based on an SOI silicon substrate and a preparation method thereof. Background technique [0002] The medium in the ONO antifuse unit structure is a natural anti-radiation unit, which has the advantages of non-volatility, high reliability, small size, fast speed, and low power consumption. When not programmed, the antifuse unit exhibits high The resistance state can be as high as 1010 ohms. After programming with a suitable voltage between the upper and lower electrodes, the antifuse unit shows good ohmic resistance characteristics. At present, ONO antifuse technology has been widely used in the fields of computer, communication, automobile, satellite and aerospace. [0003] Although the ONO antifuse unit itself has a high ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/525H01L21/768
Inventor 刘国柱洪根深郑若成吴建伟刘佰清汤赛楠
Owner 58TH RES INST OF CETC