A kind of anti-radiation ono antifuse unit structure and preparation method thereof
A unit structure, anti-fuse technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem of lack of radiation resistance, and achieve improved radiation resistance performance, simple process, conduction The effect of low resistance
Active Publication Date: 2018-03-02
58TH RES INST OF CETC
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Problems solved by technology
However, the ONO anti-fuse unit with ordinary field isolation does not have good radiation resistance, especially in terms of total dose radiation (TID), which is mainly manifested in the leakage between devices due to the TID radiation effect at the edge of the field region. leakage channel
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[0042] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0043] Such as Figure 4 Shown: in order to be able to improve the anti-radiation performance of ONO antifuse unit structure, ONO antifuse unit of the present invention is made on the top layer silicon film 13 of SOI silicon substrate, and is carried out all-dielectric isolation by STI isolation groove 00; STI The N-doped oxide layer 14 covering the sidewall of the isolation trench is SiO x N y , and filled with non-doped polysilicon or amorphous silicon dielectric layer 15; the anti-radiation ONO antifuse unit structure includes the SOI top silicon film as the lower electrode plate of the SOI silicon substrate, and the upper part of the SOI silicon substrate is pr...
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The invention relates to a radiation-resistant ONO antifuse unit structure and a preparation method thereof, belonging to the technical field of microelectronics. According to the technical solution provided by the present invention, the anti-radiation ONO antifuse unit structure includes an ONO antifuse unit, and the ONO antifuse unit is fabricated on the top silicon film of the SOI silicon substrate, and is completely isolated by STI isolation grooves; STI The sidewall of the isolation groove is covered with a SiOxNy layer and filled with non-doped polysilicon or amorphous silicon medium. The radiation-resistant ONO antifuse unit structure of the present invention has a simple manufacturing process and is compatible with CMOS technology. The radiation-resistant ONO antifuse unit structure not only has good programming voltage uniformity, short programming time, and low programming on-resistance, but also has It has the advantages of anti-total dose and single-particle capability, and at the same time, the preparation method of the anti-radiation ONO antifuse unit structure of the present invention is also applicable to the bulk silicon CMOS process.
Description
technical field [0001] The invention belongs to the technical field of microelectronic integrated circuits, and relates to an ONO antifuse unit structure and a preparation method thereof, in particular to a radiation-resistant ONO antifuse unit structure based on an SOI silicon substrate and a preparation method thereof. Background technique [0002] The medium in the ONO antifuse unit structure is a natural anti-radiation unit, which has the advantages of non-volatility, high reliability, small size, fast speed, and low power consumption. When not programmed, the antifuse unit exhibits high The resistance state can be as high as 1010 ohms. After programming with a suitable voltage between the upper and lower electrodes, the antifuse unit shows good ohmic resistance characteristics. At present, ONO antifuse technology has been widely used in the fields of computer, communication, automobile, satellite and aerospace. [0003] Although the ONO anti-fuse unit itself has a high...
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IPC IPC(8): H01L23/525H01L21/768
Inventor 刘国柱洪根深郑若成吴建伟刘佰清汤赛楠
Owner 58TH RES INST OF CETC