Si-based magnetic sensing device with low magnetic field and giant magnetoresistance, preparation method and performance testing method

A magnetic sensor and low magnetic field technology, which is applied in the field of silicon-based low magnetic field giant magnetoresistive magnetic sensor devices and their preparation and performance testing, can solve the problems of device miniaturization, achieve low price, simple preparation process, high and low magnetic field sensitivity Effect

Inactive Publication Date: 2015-11-11
TSINGHUA UNIV
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this magnetic sensor requires an external diode, making it difficult to miniaturize the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Si-based magnetic sensing device with low magnetic field and giant magnetoresistance, preparation method and performance testing method
  • Si-based magnetic sensing device with low magnetic field and giant magnetoresistance, preparation method and performance testing method
  • Si-based magnetic sensing device with low magnetic field and giant magnetoresistance, preparation method and performance testing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention will be further described below in conjunction with accompanying drawing.

[0019] figure 1 Shown is the structure diagram of a silicon-based low-field giant magnetoresistive magnetic sensor device based on the differential negative conductance phenomenon. figure 2 It is a schematic diagram of the magnetoresistance measurement configuration of the silicon-based low-field giant magnetoresistance magnetic sensor device based on the differential negative conductance phenomenon, wherein each label indicates: 100-silicon-based low-field giant magnetoresistance magnetic sensor device based on the differential negative conductance phenomenon, 101-Si Single crystal substrate, 102-heavily doped region, 103-external electrode, 104-voltmeter, 105-voltage source, 106-magnetic field.

[0020] Making a silicon-based low magnetic field giant magnetoresistive magnetic sensor device 100 based on the differential negative conductance phenomenon (such as figure 1 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Doping concentrationaaaaaaaaaa
Resistivityaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of magnetic field detection, magnetic field sensor materials and devices, and particularly relates to a Si-based magnetic sensing device with low magnetic field and giant magnetoresistance based on a differential negative conductance phenomenon, a preparation method and a performance testing method. The device provided by the invention is prepared in such a mode that a heavily doped region with a certain concentration is formed on a Si single crystal substrate by using a method of ion implantation, and then two electrodes are extracted by using a method of depositing a metal film. The acquired device can generate giant magnetoresistance, and the magnetoresistance originates from resistance variations caused by current controlled differential negative conductance. The device can display a significant magnetoresistance effect in the low magnetic field, and has very high low magnetic field sensitivity. The device further has the advantages of low price, simple preparation technology and the like, is an excellent magnetic field sensor, and has potential applications in the fields of disk magnetic reading heads, electronic compasses, movement device monitoring and the like.

Description

technical field [0001] The invention belongs to the technical field of magnetic field detection and magnetic field sensor materials and devices, in particular to a silicon-based low magnetic field giant magnetoresistance magnetic sensor device based on differential negative conductance phenomenon and its preparation and performance testing method. Background technique [0002] The magnetoresistance (referred to as magnetoresistance) effect with significant effect and high magnetic field sensitivity, as the core of magnetic storage and magnetic sensing technology, has broad application prospects in disk readout heads, electronic compasses, and moving parts monitoring. Therefore, It has always been the goal pursued by the industry. The current commercial magnetic sensor devices are mainly magnetic metal multilayer film materials based on GMR and TMR effects or semiconductor-based Hall elements. Compared with the latter, the former has better low magnetic field sensitivity, bu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L43/08H01L43/12H01L21/66
Inventor 章晓中罗昭初朴红光陈娇娇熊成悦
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap