A silicon-based low magnetic field giant magnetoresistive magnetic sensor device and its preparation and performance testing method

A magnetic sensor and low magnetic field technology, which is applied in the field of silicon-based low magnetic field giant magnetoresistive magnetic sensor devices and their preparation and performance testing, can solve the problems of device miniaturization and achieve low price, simple preparation process, high and low magnetic field sensitivity Effect

Inactive Publication Date: 2017-06-30
TSINGHUA UNIV
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  • Abstract
  • Description
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Problems solved by technology

However, this magnetic sensor requires an external diode, making it difficult to miniaturize the device.

Method used

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  • A silicon-based low magnetic field giant magnetoresistive magnetic sensor device and its preparation and performance testing method
  • A silicon-based low magnetic field giant magnetoresistive magnetic sensor device and its preparation and performance testing method
  • A silicon-based low magnetic field giant magnetoresistive magnetic sensor device and its preparation and performance testing method

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with accompanying drawing.

[0019] figure 1 Shown is the structure diagram of a silicon-based low-field giant magnetoresistive magnetic sensor device based on the differential negative conductance phenomenon. figure 2 It is a schematic diagram of the magnetoresistance measurement configuration of the silicon-based low-field giant magnetoresistance magnetic sensor device based on the differential negative conductance phenomenon, wherein each label indicates: 100-silicon-based low-field giant magnetoresistance magnetic sensor device based on the differential negative conductance phenomenon, 101-Si Single crystal substrate, 102-heavily doped region, 103-external electrode, 104-voltmeter, 105-voltage source, 106-magnetic field.

[0020] Making a silicon-based low magnetic field giant magnetoresistive magnetic sensor device 100 based on the differential negative conductance phenomenon (such as figure 1 ...

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Abstract

The invention belongs to the technical field of magnetic field detection and magnetic field sensor materials and devices, in particular to a silicon-based low magnetic field giant magnetoresistance magnetic sensor device based on differential negative conductance phenomenon and its preparation and performance testing method. The device uses ion implantation to form a certain concentration of heavily doped regions on the Si single crystal substrate, and then uses the method of depositing metal thin films to lead out two electrodes. The resulting device can generate a giant magnetoresistance that arises from a change in resistance caused by a current-controlled differential negative conductance. This device can exhibit significant magnetoresistance effect in low magnetic field, and has high low magnetic field sensitivity. The device also has the advantages of low price, simple preparation process, etc., is an excellent magnetic field sensor, and has potential applications in the fields of magnetic disk reading head, electronic compass, and motion device monitoring.

Description

technical field [0001] The invention belongs to the technical field of magnetic field detection and magnetic field sensor materials and devices, in particular to a silicon-based low magnetic field giant magnetoresistance magnetic sensor device based on differential negative conductance phenomenon and its preparation and performance testing method. Background technique [0002] The magnetoresistance (referred to as magnetoresistance) effect with significant effect and high magnetic field sensitivity, as the core of magnetic storage and magnetic sensing technology, has broad application prospects in disk readout heads, electronic compasses, and moving parts monitoring. Therefore, It has always been the goal pursued by the industry. The current commercial magnetic sensor devices are mainly magnetic metal multilayer film materials based on GMR and TMR effects or semiconductor-based Hall elements. Compared with the latter, the former has better low magnetic field sensitivity, bu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/12H01L21/66
Inventor 章晓中罗昭初朴红光陈娇娇熊成悦
Owner TSINGHUA UNIV
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