A vertical bidirectional voltage-resistant power semiconductor transistor and its preparation method
A technology for power semiconductors and transistors, applied in the field of power semiconductor devices, can solve the problems of large on-resistance, increase the area of lithium battery chips, and affect the use of lithium battery chips, reduce the electric field strength, and improve the reverse voltage withstand performance. , Improve the effect of reverse withstand voltage
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Embodiment 1
[0047] Combine below figure 2 , To explain the present invention in detail, a vertical bidirectional withstand voltage power semiconductor transistor is characterized by comprising: an N-type drain 1, an N-type epitaxial layer 2 is provided on the N-type drain 1, and an N-type epitaxial layer 2 A first P-type body region 4 is provided above, an N-type buffer layer 5 is provided above the first P-type body region 4, and a heavily doped N-type source 7 is provided above the N-type buffer layer 5. The surface of the N-type source 7 is connected to the source metal layer 8, and stepped trenches are provided in the N-type epitaxial layer 2, the first P-type body region 4, the N-type buffer layer 5 and the heavily doped N-type source 7 The stepped groove is composed of a first part and a second part, the second part of the stepped groove is located above the first part of the stepped groove, and the second part of the stepped groove is wider than the first part of the stepped groove....
Embodiment 2
[0049] Combine below Figure 9 ~ Figure 16 To explain the present invention in detail, a method for preparing a vertical bidirectional voltage-resistant power semiconductor transistor includes:
[0050] The first step: first select an N-type silicon material as the substrate and epitaxially grow an N-type epitaxial layer 2;
[0051] Step 2: Next, a vertical metal oxide semiconductor field effect transistor is fabricated, and a trench is first etched on the N-type epitaxial layer 2 with a mask;
[0052] Step 3: Next, grow a gate oxide layer 3 on the trench surface, deposit polysilicon, and then etch the upper part of the polysilicon to form a hole surrounded by the upper half of the gate oxide layer 3. The depth of the hole Between 0.1~30μm;
[0053] Step 4: Next, perform field oxygen oxidation on the hole to form an oxide layer on the sidewall of the hole and the bottom of the hole, and the shape of the bottom of the hole is an upward concave arc, and the hole is concave upward. The ...
Embodiment 3
[0059] Combine below Figure 17 ~ Figure 25 To explain the present invention in detail, a method for preparing a vertical bidirectional voltage-resistant power semiconductor transistor includes:
[0060] The first step: first select an N-type silicon material as the substrate and epitaxially grow an N-type epitaxial layer 2;
[0061] Step 2: Next, a vertical metal oxide semiconductor field effect transistor is fabricated, and a trench is first etched on the N-type epitaxial layer 2 with a mask;
[0062] Step 3: Next, grow a gate oxide layer 3 on the trench surface, deposit polysilicon, and then etch the upper part of the polysilicon to form a hole surrounded by the upper half of the gate oxide layer 3. The depth of the hole Between 0.1~30μm;
[0063] Step 4: Next, perform field oxygen oxidation on the hole to form an oxide layer on the sidewall of the hole and the bottom of the hole, and the shape of the bottom of the hole is an upward concave arc, and the hole is concave upward. The...
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