A pre-cleaning chamber and semiconductor processing equipment

Abstract

The invention relates to a pre-cleaning chamber and semiconductor processing equipment, which includes a cavity, a carrying device, a coil, a first radio frequency device, a second radio frequency device, a coupling connector and a coil rotation drive device; the cavity is grounded; the carrying device is set Inside the cavity; the coil surrounds the outer wall of the cavity, the coil rotation drive device is connected to the first end of the coil, and is used to drive the coil to rotate around the cavity, and the second end of the coil is connected to the cavity; the coupling connector Surrounding the first end of the coil, and there is a preset distance between the inner wall and the coil; the first radio frequency device is capacitively coupled with the first end of the coil through a coupling connector, and is used for loading radio frequency power to the coil. The pre-cleaning chamber can make the electromagnetic field generated by the coil more uniform, thereby improving the uniformity of the pre-cleaning process of the pre-cleaning chamber to the processed workpiece; The power remains stable, which is beneficial to improve the stability of the process.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to a pre-cleaning chamber [0002] and semiconductor processing equipment. Background technique [0003] During the process of depositing an epitaxial layer on the surface of a processed workpiece, it is generally necessary to remove impurities on the surface of the processed workpiece first, and this process is performed in a pre-cleaning chamber of a semiconductor processing device. The pre-cleaning chamber excites Ar (argon), He (helium), H2 (hydrogen) and other gases passed into the chamber into plasma, and makes the particles in the plasma bombard the surface of the workpiece to be processed or interact with it. The impurities on the surface of the workpiece to be processed react to remove the impurities on the surface of the workpiece to be processed. [0004] figure 1 It is a structural schematic diagram of an existing pre-cleaning chamber. Please see ...

AI Technical Summary

Problems solved by technology

[0008] One, in the above-mentioned inductively coupled plasma device, the input end and the output end of the inductively coupled coil 21 are all connected to the power supply through a brush, that is to say, in the process, the input end and the output end of the inductively coupled coil 21 are connected to the power supply. The connection of the power supply is intermittent rather than continuous, which makes the power supply load the RF power to the inductive coupling coil. The radio frequency power is unstable, which ultimately affects the process stability of the inductively coupled plasma device for processing workpieces

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