Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method for repairing photomask pattern

A repair method and mask pattern technology, which is applied to the photoplate making process of the pattern surface, the original for photomechanical processing, optics, etc., can solve the problems of re-washing and pattern loss, so as to improve productivity and avoid re-processing Defects, the effect of ensuring reliability

Inactive Publication Date: 2015-11-25
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for repairing a photomask pattern, which is used to solve the problem that the repaired photomask pattern in the prior art is easily washed off again in the cleaning process, resulting in The pattern is missing again

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for repairing photomask pattern
  • Method for repairing photomask pattern
  • Method for repairing photomask pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0042] Please refer to attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be change...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for repairing a photomask pattern. The repairing method comprises the steps as follows: a photomask is provided, wherein the photomask comprises a transparent substrate and a shading layer; the shading layer is arranged on the transparent substrate and has a mask pattern; the mask pattern comprises a to-be-repaired part; the transparent substrate is etched; a groove which has the same pattern as the to-be-repaired part is formed in the position corresponding to the to-be-repaired part; a repair material is deposited into the groove; and the photomask pattern is repaired. The groove is fabricated in the transparent substrate and is filled with the repair material, so that stable combination of the repair material and the transparent substrate is ensured after repairing is ended; the repair material can endure a high-strength cleaning process; the repair material is prevented from being defected again; the reliability of the photomask is ensured; and the productive rate of the photomask is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for repairing a photomask pattern. Background technique [0002] Photolithography is a particularly important step in semiconductor device processing. The essence of photolithography is to replicate the circuit structure on the wafer to be etched later. The circuit structure is first made in a certain proportion in the form of graphics on a transparent substrate called a photomask. The light source transfers the graphics to the photoresist of the wafer through the photomask. After development, the subsequent etching steps Imaging the pattern on the underlying film of the wafer. [0003] It can be seen that in the photolithography step, the light source copies the pattern to the photoresist layer of the wafer substrate through the photomask. Therefore, it is necessary to make patterns on the photomask. At present, there are mainly two types of phot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/72G03F1/74
Inventor 吴苇王云海
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More