Ferromagnetic semiconductor material (Sr,Na)(Zn,Mn)2As2 and preparation method thereof

A semiconductor, 2as2 technology, applied in the selection of materials, the magnetic properties of inorganic materials, etc., can solve the problems of low practical application value, and achieve the effect of enriching electrical transport properties and good stability

Active Publication Date: 2015-11-25
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Sr(Zn,Mn) 2 As 2 It is a paramagnetic material, and its practical application value is much lower than that of ferromagnetic materials

Method used

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  • Ferromagnetic semiconductor material (Sr,Na)(Zn,Mn)2As2 and preparation method thereof
  • Ferromagnetic semiconductor material (Sr,Na)(Zn,Mn)2As2 and preparation method thereof
  • Ferromagnetic semiconductor material (Sr,Na)(Zn,Mn)2As2 and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] This embodiment provides a method for preparing a ferromagnetic semiconductor material, including:

[0059] 1) Press (Sr 0.9 Na 0.1 )(Zn 0.95 mn 0.05 ) 2 As 2 The ratio of 2.3657 grams of Sr block, 3.7272 grams of Zn powder, 4.4203 grams of As powder, 0.1648 grams of Mn powder and 0.1439 grams of Na 3 Mix the As powder evenly, and put the mixture into an alumina ceramic test tube after being pressed into shape;

[0060] 2) Vacuum-encapsulate the ceramic test tube with the sample in the quartz tube and seal it;

[0061] 3) Put the quartz tube in a high temperature furnace for sintering at 670°C for 30 hours, and obtain a ferromagnetic semiconductor material (Sr 0.9 Na 0.1 )(Zn 0.95 mn 0.05 ) 2 As 2 .

[0062] The X-ray diffraction pattern of the sample that the method of the present embodiment obtains is as figure 2 shown, from figure 2 It can be seen that the corresponding diffraction indices can be found for all the diffraction peaks of the sample, ind...

Embodiment 2

[0069] This embodiment provides a method for preparing a ferromagnetic semiconductor material, including:

[0070] 1) Press (Sr 0.9 Na 0.1 )(Zn 0.9 mn 0.1 ) 2 As 2 The ratio of 4.3885 grams of SrAs powder, 3.5311 grams of Zn powder, 2.3974 grams of As powder, 0.3296 grams of Mn powder and 0.1439 grams of Na 3 Mix the As powder evenly, and put the mixture into an alumina ceramic test tube;

[0071] 2) Vacuum seal the ceramic test tube with the sample in the quartz tube, fill the quartz tube with argon and seal it;

[0072] 3) The quartz tube is sintered at a temperature of 1000°C in a high-temperature furnace for 5 hours, and a ferromagnetic semiconductor material (Sr 0.9 Na 0.1 )(Zn 0.9 mn 0.1 ) 2 As 2 .

[0073] The X-ray diffraction pattern of the sample that the method of the present embodiment obtains is as Figure 7 shown, from Figure 7 It can be seen that the corresponding diffraction indices can be found for all the diffraction peaks of the sample, indic...

Embodiment 3

[0078] This embodiment provides a method for preparing a ferromagnetic semiconductor material, including:

[0079] 1) Press (Sr 0.9 Na 0.1 )(Zn 0.85 mn 0.15 ) ratio, 4.3885 grams of SrAs powder, 3.3349 grams of Zn powder, 2.3974 grams of As powder, 0.4945 grams of Mn powder and 0.1439 grams of Na 3 Mix the As powder evenly, put the mixture into the niobium tube, and seal the niobium tube under the protection of inert gas;

[0080] 2) Vacuum seal the niobium tube with the sample in the quartz tube, fill the quartz tube with argon and seal it;

[0081] 3) Sintering the quartz tube at a temperature of 700° C. in a high-temperature furnace for 20 hours;

[0082] 4) After the sintering is completed, the obtained sample is ground, mixed and pressed into tablets under the protection of argon gas, and put into a niobium tube, and the niobium tube is sealed under the protection of argon gas;

[0083] 5) Vacuum seal the niobium tube with the sample in the quartz tube, fill the qua...

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Abstract

The invention provides a ferromagnetic semiconductor material. The chemical formula of the ferromagnetic semiconductor material is (Sr<1-y>Na<y>)(Zn<1-x>Mn<x>)2As2, wherein y is more than 0.1 and less than 0.4, and x is more than 0.05 and less than 0.3. The invention also provides a method for preparing the ferromagnetic semiconductor material, a precursor is sintered in an oxygen-isolated environment by using a solid-phase reaction method to form the (Sr<1-y>Na<y>)(Zn<1-x>Mn<x>)2As2, y is more than 0.1 and less than 0.4, x is more than 0.05 and less than 0.3, and the sintering temperature adopted by the solid-phase reaction method is 670-1,000 DEG C.

Description

technical field [0001] The present invention relates to a kind of 2 Si 2 The ferromagnetic semiconductor material of structure, especially relates to a kind of chemical structure general formula is (Sr 1-y Na y )(Zn 1-x mn x ) 2 As 2 ferromagnetic semiconductor materials. Background technique [0002] With the rapid development of modern electronic technology and the electronic industry, traditional electronic technology has gradually been unable to meet the needs of device miniaturization. At present, scientific and technological personnel are working on introducing electron spin into conventional electronic processes, hoping to use carriers and their spin in semiconductors at the same time, so that it is possible for electronic devices to store, transmit and process quantum information at the same time. Diluted magnetic semiconductor refers to a new semiconductor compound formed by replacing some atoms in non-magnetic semiconductors with magnetic transition metal e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/40H01L43/10
Inventor 靳常青陈碧娟邓正
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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