Wafer processing method and intermediate member
A technology of intermediate parts and processing methods, applied in the direction of electrical components, semiconductor devices, electric solid devices, etc., can solve problems such as increased difficulty, chip paste protection parts, paste or adhesive residue, etc.
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[0028] Embodiments of the present invention will be described in detail below with reference to the drawings. refer to figure 1 , shows a perspective view of a semiconductor wafer (hereinafter sometimes simply referred to as "wafer") 11 suitable for processing by the processing method of the present invention.
[0029] The semiconductor wafer 11 has a front surface 11a and a back surface 11b. On the surface 11a, a plurality of streets (planned dividing lines) 13 are formed orthogonally, and devices 15 are formed in respective regions divided by the streets 13 . The semiconductor wafer 11 is composed of, for example, a silicon wafer with a thickness of 700 μm.
[0030] like figure 1 As shown in the enlarged view of , a plurality of protruding bumps 17 are formed on the four sides of each device 15 . Because the bumps 17 are formed on the four sides of each device 15, the semiconductor wafer 11 has: a central region (bump formation region) 19 in which the bumps 17 are formed;...
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