Antifuse element, method for manufacturing antifuse element, and semiconductor device

A manufacturing method and anti-fuse technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of high power consumption and low reliability, achieve low power consumption, improve Reliability, effect of reducing electromigration phenomenon

Active Publication Date: 2017-12-19
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present application aims to provide an antifuse element, a manufacturing method of the antifuse element, and a semiconductor device, so as to solve the problems of high power consumption and low reliability of the antifuse element in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Antifuse element, method for manufacturing antifuse element, and semiconductor device
  • Antifuse element, method for manufacturing antifuse element, and semiconductor device
  • Antifuse element, method for manufacturing antifuse element, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0048] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof.

[0049] For the convenience of description, spatially relative terms may be used here, such as "on ...", "over ...", "on the surface of ..."...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The application discloses an antifuse element, a manufacturing method of the antifuse element and a semiconductor device. The antifuse element includes a first conductive layer, a second conductive layer, and a dielectric layer disposed between the first conductive layer and the second conductive layer, and the antifuse element also includes: a first conductive protrusion disposed on The side of the first conductive layer close to the dielectric layer, and the width of the end of the first conductive protrusion away from the first conductive layer is smaller than the width of the first conductive layer. According to the antifuse element, the manufacturing method of the antifuse element, and the semiconductor device of the present application, the power consumption of the antifuse element can be reduced, and the reliability of the antifuse element can be improved.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and in particular, to an antifuse element, a method for manufacturing the antifuse element, and a semiconductor device. Background technique [0002] The anti-fuse element is one of the commonly used elements in semiconductor devices. The initial state of the anti-fuse element is non-conductive and has a large impedance. When the voltage applied to the anti-fuse element exceeds a certain level, it can create A permanently conducting current path. Antifuse elements are widely used in programmable integrated circuits (ICs). In certain programmable logic devices (PLDs), such as structured application-specific integrated circuits (ASICs), antifuse elements are used to form logic circuits within them and create customizable design approaches from standard IC designs. In a programmable read-only memory, each bit line contains a fuse and an anti-fuse, and the programming operation is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/525H01L21/768
Inventor 甘正浩洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap