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Structure and manufacturing method of 3D tunneling floating gate memory

A manufacturing method and memory technology, which are applied in the direction of electric solid state devices, semiconductor devices, electrical components, etc., can solve the problems of large area and insufficient compactness.

Active Publication Date: 2017-10-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The storage unit of this structure, one storage unit intelligently stores one data, the area is larger and not compact enough

Method used

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  • Structure and manufacturing method of 3D tunneling floating gate memory
  • Structure and manufacturing method of 3D tunneling floating gate memory
  • Structure and manufacturing method of 3D tunneling floating gate memory

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Embodiment Construction

[0053] In order to have a more specific understanding of the technical content, characteristics and effects of the present invention, now in conjunction with the accompanying drawings, the details are as follows:

[0054] The 3D (three-dimensional) tunneling floating gate memory of the present invention has a structure such as figure 2 As shown, each storage unit is composed of 2 storage tubes (the first storage tube and the second storage tube) and 1 selection tube. Each storage tube is composed of a tunnel oxide layer, a floating gate, a high voltage oxide layer, a first isolation oxide layer, a second isolation oxide layer, and a control gate. The thickness of the tunnel oxide layer is about The lateral width of the floating gate is approximately The thickness of the isolation oxide layer is approximately The lateral width of the control gate is about 0.05-0.2 μm. The width of the selection tube is about 0.1-0.4 μm. The storage tube and the selection tube are separa...

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Abstract

The invention discloses a 3D tunneling floating gate memory, the structure of which is symmetrical left and right, each storage unit is composed of two storage tubes and one selection tube, the two storage tubes are symmetrically located on both sides of the selection tube, and the storage tube An oxide layer is used to isolate the storage tube from the selection tube, and each storage tube includes a tunnel oxide layer, a floating gate, a high-voltage oxide layer, an isolation oxide layer, and a control gate. The invention also discloses a manufacturing method of the above-mentioned 3D tunneling floating gate memory. The invention greatly reduces the area of ​​the storage array by improving the structure of the 3D tunneling floating gate memory. If the design rule of 0.13 μm node is used, the area of ​​each storage unit can be about 0.13 square microns.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to the structure and manufacturing method of a 3D tunneling floating gate SONOS flash memory. Background technique [0002] Existing traditional floating gate memory structures such as figure 1 As shown, this memory cell is composed of two tubes: on the left is a memory tube formed by stacking a floating gate and a control gate, separated by an ONO layer in the middle; on the right is a single select tube. In the storage unit of this structure, one storage unit intelligently stores one data, which has a large area and is not compact enough. Contents of the invention [0003] One of the technical problems to be solved by the present invention is to provide a structure of a 3D tunneling floating gate memory, which can greatly reduce the area of ​​the memory array. [0004] In order to solve the above-mentioned technical problems, the structure of the 3...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11524H10B41/35H10B69/00
Inventor 张可钢陈华伦
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP