IGBT high efficient drive circuit

Abstract

The invention relates to a drive circuit, an IGBT high efficient drive circuit in particular, which belongs to the technical field of IGBT drive. According to the technical solutions of the invention, the IGBT high efficient drive circuit comprises an IGBT component and a resistor group connected to the gate electrode end of the IGBT component. The resistor group comprises a plurality of drive resistors. The corresponding ends of two adjacent drive resistors in the resistor group are connected through a controllable switch. The other ends of the drive resistors in the resistor group are connected to the gate electrode end of the IGBT component. The control ends of the controllable switches are connected to a switch drive circuit that controls the conducting states of the controllable switches. The switch drive circuit is connected to a current processing and controlling circuit. The current processing and controlling circuit is connected to a current sampling circuit that detects a conducting current flowing through the IGBT component. The drive circuit provided by the invention is simple in structure and is easy to make. With the drive circuit, the service lifetime of the IGBT component can be prolonged and the working efficiency of an IGBT circuit can be increased. The drive circuit achieves safety and reliability.

Description

technical field [0001] The invention relates to a driving circuit, in particular to an IGBT high-efficiency driving circuit, belonging to the technical field of IGBT driving. Background technique [0002] For IGBT drive, the external drive resistor will affect IGBT loss and switching time, reverse bias safe operating area (RBSOA), short-circuit current safe operating area (SCSOA), electromagnetic interference (EMI), dv / dt, di / dt and other parameters. [0003] At present, the selection of IGBT drive circuit resistance has figure 1 and figure 2 Two ways, where, figure 1 The turn-on and turn-off of the medium IGBT use the same resistance, the disadvantage is that for some high-frequency applications (such as frequency>=20KHz) when the turn-off resistance is large, the turn-off loss will be too large and the device will generate a lot of heat. In view of the above problems, the proposed figure 2 In the improvement scheme shown, different resistances are used for turn-on ...

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Problems solved by technology

[0004] but figure 1 and figure 2 For occasions where the output power changes greatly (such as electric vehicle motor drive, photovoltaic power generation and wind power generation), the general driving resistance is set according to the maximum power requirement (in order to limit the device change rate, the general resistance is large), but the actual The time when the maximum power appears in the work only accounts for a small part of its actual working conditions, so that the IGBT in low power output occasions is not working in its best working state due to the excessive drive resistance, resulting in an increase in device temperature and overall system work efficiency. Decline

In addition, in the semiconductor failure analysis theory, when the temperature of a power device (IGBT) rises by 10°C, the lifetime of the device will be cut in half

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