Preparation method for reversible N type graphene induced by water-based ALD (Atomic Layer Deposition)

Abstract

The invention provides a preparation method for reversible N type graphene induced by water-based ALD (Atomic Layer Deposition). The preparation method comprises the following steps: providing a substrate and forming a graphene layer on the surface of the substrate; placing the substrate, on which the graphene layer grows, in an ALD chamber, increasing the temperature of the ALD chamber to a set value, feeding at least one cycle of deionized water, and increasing the concentration of H2O in a H2O / O2 molecule pair adsorbed on the surface of the graphene layer so as to enable the concentration of O2 in the H2O / O2 molecule pair to be reduced relatively and form a N type graphene layer. According to the preparation method for the reversible N type graphene induced by water-based ALD (Atomic Layer Deposition), provided by the invention, the crystal structure of graphene is not damaged, Si-based integration is easy, simplicity and high efficiency are realized, and the N type graphene layer prepared through the method has reversibility and can be repaired by annealing at high temperature to form a P type graphene layer or an intrinsic graphene layer.

Description

Technical field [0001] The invention belongs to the manufacturing field of graphene, and relates to a method for preparing reversible N-type graphene, and in particular to a method for preparing reversible N-type graphene induced by water-based ALD. Background technique [0002] Graphene is a carbon atom with sp 2 The hybrid orbitals form a hexagonal shape, a single layer of two-dimensional crystals arranged in a honeycomb lattice. In 2004, Novoselov and Geim's team used a micromechanical exfoliation method to prepare graphene that can exist stably at room temperature, which set off an upsurge in graphene research. In recent years, a series of studies on the preparation, transfer, characterization, and application of graphene materials in functional devices such as semiconductors and chemistry have been carried out one after another, with rapid progress. Due to graphene’s unique zero-bandgap energy band structure, ultra-high electron mobility at room temperature (theoretically u...

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Problems solved by technology

[0004] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of reversible N-type graphene preparation method that water-based ALD induces, for solving the method for preparing N-type graphene in the prior art can destroy graphene Difficulties in crystal structure and silicon-based integration

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