Gate drive circuit, display panel shutdown method, display panel, and display device

Abstract

The invention provides a grid driving circuit, a display panel shutdown method, a display panel and a display apparatus. The grid driving circuit comprises a signal input unit, a driving unit and a selection unit; the signal input unit comprises an input signal end and a first high-voltage end; the driving unit is connected with the grid of each film transistor in the display panel; the grid driving circuit further comprises a selection unit, and the selection unit is connected between the signal input unit and the driving unit for gating the input signal end with the driving unit or gating the first high-voltage end with the driving unit; in the first phase of shutdown of the display panel, the selection unit gates the input signal end with the driving unit; and in the second phase of the shutdown of the display panel, the selection unit gates the first high-voltage end with the driving unit. The grid driving circuit can reduce impact currents during the shutdown and prevent Xao motion from being repeatedly executed.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a gate drive circuit, a display panel shutdown method, a display panel and a display device. Background technique [0002] When the existing display panel is turned off, it generally performs Xao action, that is, the drive unit will output a turn-on voltage to all gate lines to turn on the thin film transistors in all pixels; this can completely release the charge in the pixel and avoid the long-term existence of the charge. And produce direct current effect, cause afterimage, flicker (Flicker) and other problems. [0003] Specifically, when the display panel is turned off, the voltage value of its working signal (that is, the Vin signal) decreases gradually. The voltage detection module (generally called Xao module or Xon module) detects the driving voltage (the voltage value of which is equal to the Vin signal) output by the driving unit according to the Vin signal, a...

AI Technical Summary

Problems solved by technology

[0005] First of all, before performing the Xao action, the gate voltage of most thin film transistors is VOFF, and its voltage value is generally about -8V. When performing the Xao action, the gate voltage will be raised to VGH, which is about 30V; Obviously, if figure 1 As shown, at the moment of Xao action, the voltage of the gate of the thin film transistor changes greatly (see figure 1 In the Gate signal change), this will generate a large impact current (ie figure 1 Medium Ion), it is easy to cause the wire terminal (Lead) to burn

[0006] Secondly, if figure 2 As shown, due to the large range of voltage input to the drive unit (from Vin to VGH), the Vin signal will bounce (see figure 2 The part surrounded by the elliptical dashed circle); in this way, when the power is turned off, the Xao module will detect the predetermined voltage value multiple times, so that the Xao action will be executed repeatedly and repeatedly, and multiple large shocks will be generated during the process current (such as figure 2 Ion and Ioff in), further increasing the probability and risk of wire terminals being burned

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