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Thin-film transistor, array substrate and production method thereof

一种薄膜晶体管、阵列基板的技术，应用在显示领域，能够解决过刻、光阻脱落等问题

Inactive Publication Date: 2015-12-23
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During the etching process, it is easy to cause photoresist peeling off, which leads to over-etching

Method used

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  • Thin-film transistor, array substrate and production method thereof
  • Thin-film transistor, array substrate and production method thereof
  • Thin-film transistor, array substrate and production method thereof

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Embodiment Construction

[0021] In the following description, for purposes of illustration rather than limitation, specific details, such as specific system architectures, interfaces, and techniques, are set forth in order to provide a thorough understanding of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.

[0022] see figure 1 , figure 1 It is a schematic structural view of an embodiment of the array substrate of the present application. In this embodiment, the array substrate 100 includes a substrate 110 and a plurality of TFTs 120 ( figure 1 Only one TFT 120 on the substrate 110 is exemplarily shown for illustration). Wherein, the substrate 110 may be a glass substrate or a tran...

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Abstract

The invention discloses a thin-film transistor, an array substrate and a production method of the thin-film transistor and the array substrate, wherein the thin-film transistor comprises a grid electrode, a source electrode and a drain electrode, and both the source electrode and the drain electrode are arranged on the same side of the grid electrode, wherein the grid electrode comprises a first buffer layer, a first copper layer, a second copper layer and a second buffer layer which are sequentially superimposed, and the second buffer layer is arranged on one side close to the source electrode and the drain electrode; and / or the source electrode and the drain electrode respectively comprise a first buffer layer, a first copper layer, a second copper layer and a second buffer layer which are sequentially superimposed, and the first buffer layer is arranged on one side close to the grid electrode; and the first copper layer is obtained by deposition at first power, the second copper layer is obtained by deposition at second power, and the first power is higher than the second power. Through the way, the light resistance loss in etching can be prevented.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a thin film transistor, an array substrate and a manufacturing method thereof. Background technique [0002] In the field of liquid crystal display, an array substrate provided with a thin film transistor (English: thinfilm transistor, TFT for short) is used as a switch of the liquid crystal display panel, and its structure and process are of great importance to the display effect of the liquid crystal display panel. In order to respond to the current large-scale demand and reduce the RC delay in the signal transmission process, low-cost, low-impedance copper is obviously the best choice for making the gate, source, and drain of TFTs. [0003] In the current TFT manufacturing process, the gate, source, and drain of the TFT often adopt a structure in which a molybdenum layer and a copper layer are stacked or a titanium layer and a copper layer are stacked, wherein the m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/40H01L29/417H01L29/423H01L27/12H01L21/77
CPCH01L27/1214H01L27/1259H01L29/41733H01L29/42384H01L29/786H01L21/443H01L29/4908H01L29/66969H01L29/7869H01L27/1225H01L29/42372H01L29/45
Inventor 周志超武岳
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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