Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of preparation method of finfet semiconductor device

A semiconductor and device technology, applied in the field of FinFET semiconductor device preparation, can solve unsolved and difficult to prepare FinFET devices and other problems

Active Publication Date: 2018-09-04
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Neither of the above two patents solves the problem that it is difficult to prepare FinFET devices combining 3T and 4T in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of finfet semiconductor device
  • A kind of preparation method of finfet semiconductor device
  • A kind of preparation method of finfet semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0032] This embodiment relates to a method for manufacturing a FinFET semiconductor device. Specifically, the method includes the following steps:

[0033] Step S1, providing a semiconductor substrate 1, in a preferred embodiment of the present invention, the material of the semiconductor substrate 1 is single crystal silicon, of course, the semiconductor substrate 1 can also be other semiconductor materials, because the semiconductor substrate 1 is not The key point of the present invention's improvement, just won't go into details here, as figure 1 structure shown.

[0034] Step S2, doping and epitaxially growing an epitaxial layer 2 on the semiconductor substrate 1. In a preferred embodiment of the present invention, the epitaxial layer 2 is germanium-doped epitaxy or carbon-doped epitaxy; ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the preparation method of the semiconductor structure, especially to a preparation method of a fin-field-effect-transistor (FinFET) semiconductor device. Epitaxial growth is carried out to form a doped epitaxial layer; on the basis of etching differences, of the epitaxial layer, a semiconductor substrate, and an oxide layer, etching is carried out successively to form fin parts with different heights; and then a designated gate is separated to form double gates by using a mechanical rub-down method, thereby forming a FinFET semiconductor device based on combination of three terminals (3T) and four terminals (4T).

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a FinFET semiconductor device. Background technique [0002] With the continuous development of semiconductor technology, traditional planar devices can no longer meet people's needs for high-performance devices. FinFET (Fin Field-Effect Transistor, Fin Field Effect Transistor) is a three-dimensional device, including fins formed vertically on a substrate and stacked gates intersecting the fins. This design can greatly improve circuit control and reduce leakage current (leakage), and can also greatly shorten the gate length of transistors [0003] At present, there are two ways to separate the two gates of the FinFET. One is to use chemical mechanical polishing to remove the gate at the top of the Fin, but in the traditional FinFET structure, this method is difficult to separate the 4T-FinFET (four-terminal FinFET) and 3T-FinFET (three...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
CPCH01L29/66795
Inventor 黄秋铭
Owner SHANGHAI HUALI MICROELECTRONICS CORP