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Formation method of semiconductor structure

A technology of semiconductor and dummy gate structure, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of unstable performance and poor reliability of fin field effect transistors, and achieve uniform and reliable atomic distribution density The effect of improving performance and stabilizing performance

Active Publication Date: 2019-03-12
SEMICON MFG SOUTH CHINA CORP
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Problems solved by technology

[0005] However, the performance of fin field effect transistors formed by the prior art is not stable and the reliability is poor

Method used

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  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

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Experimental program
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Embodiment Construction

[0035] As mentioned in the background, the FinFETs formed in the prior art have unstable performance and poor reliability.

[0036] In order to further reduce the size of the semiconductor device and increase the integration of the semiconductor device, a high-K metal gate (High-K Metal Gate, HKMG for short) structure is introduced into the transistor. Please continue to refer figure 1 , the gate structure 103 includes: a gate dielectric layer located on the sidewall and top surface of the fin 101 , and a gate layer located on the surface of the gate dielectric layer. When the gate structure 103 is a high-K metal gate structure, the material of the gate dielectric layer is a high-K dielectric material, and the material of the gate layer is metal.

[0037] However, due to the large difference in lattice constant between the high-K dielectric material and the material of the fin portion 101, the lattice matching between the gate dielectric layer and the fin portion 101 is low, ...

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Abstract

The invention discloses a method for forming a semiconductor structure. The method comprises the steps as follows: a substrate is provided; a fin part is formed on the surface of the substrate; an isolating layer is formed on the surface of the substrate; the surface of the isolating layer is lower than the top surface of the fin part; the isolating layer covers a partial side wall surface of the fin part; after the isolating layer is formed, a non-crystallizing treatment is carried out on the fin part, so that a non-crystallizing region is formed by the region, on the side wall surface and the top surface, in the fin part; after the non-crystallizing treatment, an oxidation is carried out on the non-crystallizing region by an oxidation technology; and an oxidation layer is respectively formed on the side wall and the top surface of the fin part. The formed oxidation layers are uniform in thickness, so that the stability of the formed semiconductor structure is improved; and the performance is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, a Fin Field Effect Transistor (Fin FET) is proposed i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/02H01L21/28
Inventor 赵杰
Owner SEMICON MFG SOUTH CHINA CORP
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