Semiconductor device and forming method thereof

Abstract

The invention provides a semiconductor device and a forming method thereof. A node contact window array is defined by using a bit line group and an isolation line group, an auxiliary line is further arranged, and an auxiliary contact window is defined at the periphery of the node contact window array by utilizing the auxiliary line, at this time, the auxiliary contact window is used, so that the arrangement density of the node contact windows in the edge area and the middle area in the node contact window array can be effectively balanced, the morphology precision of the node contact windows in the edge area is improved, and the morphology uniformity of the node contact windows in the edge area and the node contact windows in the middle area can be further improved.

Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique

[0002] Memory, such as dynamic random access memory (Dynamic Random Access Memory, DRAM), which generally includes a storage capacitor and a storage transistor electrically connected to the storage capacitor, the storage capacitor is used to store charges representing stored information, and the storage transistor The storage capacitor can be electrically connected through a node contact.

[0003] Currently, a method for preparing a node contact is, for example, using bit lines and isolation lines to define a node contact window, and then filling the node contact window with a conductive material to form a node contact.

[0004] However, when the bit lines and isolation lines are prepared, the graphic morphology of the bit lines and isolation lines corresponding to the edge positions is easily def...

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