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PMOS transistor repairing circuit and method

A technology for repairing circuits and repairing methods, which is applied in the fields of improving the reliability of transistors and field effect transistors, and logic circuits, etc. It can solve problems affecting the life of PMOS transistors, etc., and achieve the effect of improving NBTI effect and prolonging life

Active Publication Date: 2016-02-17
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] With the reduction of semiconductor size, the NBTI effect of PMOS transistors is becoming more and more obvious, which seriously affects the life of PMOS transistors

Method used

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  • PMOS transistor repairing circuit and method
  • PMOS transistor repairing circuit and method

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Embodiment Construction

[0035] As described in the background, since the channel region of the PMOS transistor needs to be applied with a negative bias gate voltage, the negative bias gate voltage will cause the NBTI effect of the PMOS transistor and affect the life of the PMOS transistor. The invention provides a repair circuit and method for a PMOS transistor, which improves the NBTI effect of the PMOS transistor by applying a bias voltage of a negative voltage value to the substrate of the PMOS transistor when the PMOS transistor is in an off state.

[0036] Figure 4 It is a PMOS transistor and a repair circuit thereof according to an embodiment of the present invention. As the PMOS transistor P40 to be repaired, the PMOS transistor P40 may be a test transistor for reliability testing, or an application transistor in a functional chip. The gate of the PMOS transistor P40 is suitable for receiving the driving signal Vg, the source of the PMOS transistor P40 is suitable for receiving the power sup...

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PUM

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Abstract

The present invention provides a PMOS transistor repairing circuit and method. The PMOS transistor repairing circuit is suitable for providing bias voltage for a substrate of a PMOS transistor when the PMOS transistor is at a cut-off state, and the voltage value of the bias voltage is negative. The PMOS transistor repairing method comprises controlling the PMOS transistor to cut off, applying the bias voltage to the substrate of the PMOS transistor when the PMOS transistor is at the cut-off state, the voltage value of the bias voltage being negative. With adoption of the PMOS transistor repairing circuit and method, a negative bias temperature instability (NBTI) effect of the PMOS transistor can be repaired, and the service life of the PMOS transistor is prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a repair circuit and method for a PMOS transistor. Background technique [0002] As the integration level of integrated circuits is becoming higher and higher, the reliability requirements of transistors are also increasing. In a CMOS process, when evaluating the reliability of a PMOS transistor, negative bias temperature instability (NBTI, Negative Bias Temperature Instability) is a major evaluation factor. NBTI means that under the action of negative bias gate voltage and high temperature of PMOS transistor, the hydrogen-silicon bond at the interface between the gate oxide layer of the PMOS transistor and the substrate is broken, forming interface defect charges, resulting in the threshold voltage of the PMOS transistor The phenomenon of drifting with the saturation current. [0003] figure 1 is a schematic diagram of the circuit structure of the NBTI for testing PMOS...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCH01L27/092H03K19/00315H03K19/00384
Inventor 甘正浩
Owner SEMICON MFG INT (SHANGHAI) CORP
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