Repair circuit and method of pmos transistor

Abstract

The present disclosure provides integrated circuit (IC) devices and repair methods of the IC devices. An IC device includes a PMOS transistor including a substrate, a gate dielectric layer on the substrate, and a gate on the gate dielectric layer. The IC device also includes a repair circuit configured to apply a negative bias voltage to the substrate of the PMOS transistor, when the PMOS transistor is in an OFF state, to cause injections of electrons in the substrate into the gate dielectric layer to neutralize holes caused by negative bias temperature instability (NBTI) effect. The repair circuit is further configured to stop applying the negative bias voltage to the substrate of the PMOS transistor when the PMOS transistor is in an ON state. As such, the disclosed IC device repairs defect caused by NBTI effect in the PMOS transistor and prolongs the lifespan of the PMOS transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a repair circuit and method for a PMOS transistor. Background technique [0002] As the integration level of integrated circuits is becoming higher and higher, the reliability requirements of transistors are also increasing. In a CMOS process, when evaluating the reliability of a PMOS transistor, negative bias temperature instability (NBTI, Negative Bias Temperature Instability) is a main evaluation factor. NBTI means that under the action of negative bias gate voltage and high temperature of PMOS transistor, the hydrogen-silicon bond at the interface between the gate oxide layer of the PMOS transistor and the substrate is broken, forming interface defect charges, resulting in the threshold voltage of the PMOS transistor The phenomenon of drifting with the saturation current. [0003] figure 1 is a schematic diagram of the circuit structure of the NBTI for testing PMOS ...

AI Technical Summary

Problems solved by technology

[0006] With the reduction of semiconductor size, the NBTI effect of PMOS transistors is becoming more and more obvious, which seriously affects the life of PMOS transistors

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