Reaction chamber and semiconductor processing equipment

Abstract

The invention provides a reaction chamber and semiconductor processing equipment. The reaction chamber comprises a chuck and a plasma generation device, wherein the chuck is arranged in the reaction chamber and is used for bearing a substrate, the plasma generation device is used for generating plasmas and conveying the plasmas into the reaction chamber, the reaction chamber further comprises a supporting member, and the supporting member is used for supporting the plasma generation device to make the plasma generation device penetrate through the top wall of the reaction chamber and make the plasma generation device be oppositely arranged relative to the chuck at a predetermined distance. According to the reaction chamber, density loss and energy attenuation are avoided in a plasma transmission process, so the etching rate can be improved, and consumption of an excitation power source can be reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor equipment manufacturing, and in particular relates to a reaction chamber and semiconductor processing equipment. Background technique [0002] In the manufacturing process of integrated circuits, it is often necessary to use etching technology to make extremely fine-sized patterns on the substrate. In the reaction chamber of dry etching equipment, it generally includes a plasma system and a lower bias system. The plasma system is mainly used to generate high-density plasma in the reaction chamber; the lower bias system is mainly used to guide the plasma. The charged particles in the bulk bombard the substrate to complete the etching. [0003] With the development of three-dimensional stacked packaging, MEMS packaging, vertically integrated sensor arrays, and mesa MOS power device flip-chip bonding technology, through-silicon via (TSV) interconnection technology is receiving more and more at...

AI Technical Summary

Problems solved by technology

[0004] However, in practical applications, the following problems often occur: it is necessary to increase the etching rate to meet the requirements by increasing the output power of the excitation power supply used to generate plasma, which will cause high consumption of the output power of the excitation power supply.

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