A kind of reaction chamber and reaction equipment

Abstract

The invention provides a reaction cavity and reaction equipment. The reaction cavity comprises a pedestal for bearing a processed workpiece and a process assembly. The process assembly contains a shielding member having an upper shielding member and a lower shielding member; the bottom of the lower shielding member has a U-shaped groove structure encircling the bottom of the upper shielding member; and at least one first pore is formed in the lower part of one side, approaching the side wall of the reaction cavity, of the U-shaped groove. According to the technical scheme, the first pore is formed in the bottom of the lower shielding member by approaching an inlet of an air source, so that reaction gas can be led into a processing area directly. Therefore, the reaction gas can be diffused to the reaction chamber uniformly and fully, thereby influencing the proportion component of the reaction gas in the reaction cavity and improving the diffusion effect and uniformity of the reaction gas entering the reaction cavity and thus obtaining a better thin film.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a reaction chamber and reaction equipment. Background technique [0002] In the manufacture of integrated circuits and displays, a substrate, such as a semiconductor wafer or a display panel, is placed in a reaction chamber, and process conditions in the reaction chamber are set to deposit material on or etch the substrate. A typical reaction chamber includes a peripheral wall surrounding the plasma region, a substrate holder for supporting the substrate, a gas source for providing process gases within the chamber, a gas energizer for applying energy to the gas to process the substrate, and Vent for maintaining pressure. The reaction chamber may include sputtering (PVD), chemical vapor deposition (CVD) and etch chambers. [0003] In the sputtering process, a process gas including an inert gas and / or a reactive gas is supplied into the reaction chamber, and an e...

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Problems solved by technology

[0005] The present invention provides a reaction chamber and reaction equipment, which are used to solve the problem that the gas intake method in the prior art prevents the reaction gas from being sufficiently uniformly diffused into the reaction chamber, so that the properties of the deposited film on the edge of the wafer are affected, and the obtained The problem of poor film uniformity

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