A graphene electret nanogenerator
A nano-generator and graphene technology, applied in the direction of circuits, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve problems such as difficult to collect, avoid energy loss, simple process flow, high-efficiency Effect of Theoretical Product Life
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0056] 1# graphene electret nanogenerator, refer to figure 1 , its specific structure includes:
[0057] bottom electrode 5;
[0058] the first insulating layer 4 on the bottom electrode 5;
[0059] the charge storage layer 3 on the first insulating layer 4;
[0060] the second insulating layer 2 on the charge storage layer 3;
[0061] The top electrode 1 on the second insulating layer 2 .
[0062] in:
[0063] The bottom electrode 5 is a phosphorus-doped N-type semiconductor silicon wafer with a thickness of 180 microns.
[0064] The first insulating layer 4 is a silicon dioxide layer with a thickness of 250 nanometers thermally oxidized on the semiconductor silicon wafer as the bottom electrode 5 .
[0065] Preparation of the charge storage layer 3: Methanol and deionized water are made into the first dispersant at a volume ratio of 1:1, and graphene oxide powder with a sheet size of 400 nm is put into the first dispersant to make graphite oxide The first suspension w...
Embodiment 2
[0070] 2# graphene electret nanogenerator, its structure is basically the same as embodiment 1, and difference is:
[0071] The bottom electrode 5 is a stilbene-doped P-type semiconductor silicon wafer with a thickness of 180 microns.
[0072] The first insulating layer 4 is a silicon dioxide layer with a thickness of 320 nanometers thermally oxidized on the semiconductor silicon wafer as the bottom electrode 5 .
[0073] Preparation of the charge storage layer 3: the partial graphene oxide powder with a sheet size of 500 nanometers was dropped into a methanol solution to prepare a first suspension with a partial graphene oxide concentration of 6 mg / mL, and the first suspension was scraped It is coated on the silicon dioxide layer as the first insulating layer by means of coating, and then flattened and dried with hot air to obtain a film with a thickness of 0.9 microns to form the charge storage layer 3 .
[0074] The second insulating layer 2 adopts a polyimide film with a ...
Embodiment 3
[0078] 3# graphene electret nanogenerator, its structure is basically the same as embodiment 1, and difference is:
[0079] The bottom electrode 5 is a phosphorus-doped N-type semiconductor silicon wafer with a thickness of 220 microns.
[0080] The first insulating layer 4 is a silicon dioxide layer with a thickness of 350 nanometers thermally oxidized on the semiconductor silicon wafer as the bottom electrode 5 .
[0081] Preparation of charge storage layer 3: Put graphene oxide powder and partially reduced graphene oxide powder with a sheet size of 600 nanometers into an ethanol solution to make the total concentration of graphene oxide and partially reduced graphene oxide 7 mg / mL The first suspension, the first suspension is coated on the silicon dioxide layer as the first insulating layer in the form of a drop film, and then flattened and dried with hot air to obtain a film with a thickness of 1.0 microns, which is made charge storage layer 3.
[0082] The second insula...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More