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Programming method and programming device for anti-fuse one-time programmable memory

A programming method and technology of programming equipment, applied in the field of programming method and programming equipment of anti-fuse type one-time programmable memory, can solve problems such as low yield rate, improve yield rate, reduce the possibility of overheating problem, reduce damage the effect of the probability of

Inactive Publication Date: 2016-03-23
ZHUHAI CHUANGFEIXIN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] But, applicant utilizes the antifuse type OTP memory that present programming method obtains, and its yield rate is lower

Method used

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  • Programming method and programming device for anti-fuse one-time programmable memory
  • Programming method and programming device for anti-fuse one-time programmable memory
  • Programming method and programming device for anti-fuse one-time programmable memory

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Embodiment Construction

[0038] The applicant found that in the process of producing the anti-fuse type OTP memory, due to the limitation of the process, each memory cell constituting the memory often has the problem of unevenness. For example, the thickness of the insulating dielectric layer in the memory cell is uneven.

[0039] In the existing programming process, the same voltage is applied to each memory cell of the anti-fuse type OTP memory, and the voltage is maintained for the same length of time.

[0040] Due to the unevenness of the memory cells, the time required for the insulating dielectric layer of each memory cell to be broken down under the same voltage is different. In addition, since the voltage applied to each memory cell is maintained for the same length of time, for a memory cell whose insulating dielectric layer has been broken down (its resistance is low), if the voltage continues to be applied, the memory cell will quickly overheat. The fuse formed between the upper conductive elect...

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Abstract

The invention discloses a programming method for an anti-fuse one-time programmable memory. The method comprises: applying a pulse voltage to a memory unit; in the process of applying the pulse voltage, detecting whether an insulated dielectric layer in the memory unit is broken down or not; and when the insulated dielectric layer of the memory unit is broken down, stopping the application of the pulse voltage. Based on the programming method disclosed by the invention, after the memory unit is hardly broken down, the application of the pulse voltage to the memory unit is stopped in time, so that the possibility of the overheat problem of the memory unit is greatly reduced, the probability of fuse damage formed between an upper conductive electrode layer and a lower conductive electrode layer in the memory unit is reduced, and the yield of the anti-fuse one-time programmable memory is increased. The invention furthermore discloses a programming device.

Description

Technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a programming method and a programming device of an anti-fuse type one-time programmable memory. Background technique [0002] One Time Programmable (OTP) memory is a non-volatile memory that supports one-time programming, which is widely used in analog circuits, digital / SOC chips, SRAM / DRAM memory and other fields. [0003] At present, OTP memory is mainly divided into fuse type (e-Fuse), anti-fuse type (Anti-fuse) and floating gate charge storage type. The anti-fuse type OTP memory includes a plurality of memory cells, where a structure of the memory cell is as figure 1 As shown, it is composed of an upper conductive electrode layer 100, a lower conductive electrode layer 200, and an insulating dielectric layer 300 in the middle. Its working principle is: in the unprogrammed state, due to the existence of the insulating dielectric layer 300, the memory cell presents a high ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/34
CPCG11C16/10G11C16/3404
Inventor 李立
Owner ZHUHAI CHUANGFEIXIN TECH CO LTD
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