Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

High temperature resistant multiferroic aluminum nitride film and preparation method thereof

A technology of aluminum nitride and multiferroic materials, applied in the field of materials, can solve the problems of aluminum nitride, poor high temperature resistance, and low Curie temperature that have not been reported in the literature

Active Publication Date: 2018-04-10
TSINGHUA UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the single-phase multiferroic materials discovered so far have low Curie temperature and poor high temperature resistance, and it is urgent to find new materials with high Curie temperature and high working temperature.
At present, the literature has reported ferromagnetic or piezoelectric aluminum nitride materials, but no literature has reported that aluminum nitride has both ferroelectric and ferromagnetic properties, and the ferroelectric and ferromagnetic Curie temperature reaches 450 degrees Celsius. Electric field can modulate magnetism, and ferroelectricity can also be tuned by magnetic field

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Place strips of Cr and Ta (molar ratio 1:1) on high-purity Al target, and use radio frequency magnetron sputtering on the substrate Pt / SiO 2 Thin film deposited on / Si, the sputtering power is 200W, the deposition temperature is 550°C, and the deposition direction is the substrate Pt / SiO 2 / Si (002) plane, and Ar ion beam bombardment is carried out at the same time, and the direction of the bombardment is the same as that of the substrate Pt / SiO 2 The direction of the (002) plane of / Si is 45°, the bombardment energy is 1000 electron volts, and the ion beam bombardment dose is 1×10 8 / cm 2 , and then returned to normal pressure for annealing at 700°C for 1.2 hours, and applied a voltage of 100V or -100V between the surface of the deposited material and the back of the substrate, and the doped aluminum nitride material provided by the present invention was obtained after the annealing was completed.

[0051] The molecular formula of the doped aluminum nitride materia...

Embodiment 2

[0054] Al, Mg, and Ca powders with a purity of 5 nines are pressed by Al 0.91 (Mg 0.5 Ca 0.5 ) 0.09 The proportion of mixed, sintered into the target material, under the nitrogen and argon atmosphere of 0.3Pa (partial pressure ratio of 1:3) using magnetron sputtering on the substrate Pt / SiO 2 Thin film deposited on / Si, the sputtering power is 200W, the deposition temperature is 550°C, and the deposition direction is the substrate Pt / SiO 2 / Si (002) plane, and Ar ion beam bombardment is carried out at the same time, and the direction of the bombardment is the same as that of the substrate Pt / SiO 2 The direction of the (002) plane of / Si is 45°, the bombardment energy is 1000 electron volts, and the ion beam bombardment dose is 1×10 8 / cm 2 , then returned to normal pressure and annealed at 700°C for 1.2 hours, and applied a voltage of 100V or -100V between the surface of the deposited material and the back of the substrate, and the doped aluminum nitride material provided...

Embodiment 3

[0058] Press Al, Sc, Y powders with a purity of 5 nines to Al 0.85 (Sc 0.5 Y 0.5 ) 0.15 The proportion of mixed, sintered into the target material, under the nitrogen and argon atmosphere of 0.3Pa (partial pressure ratio of 1:3) using magnetron sputtering on the substrate Pt / SiO 2 Thin film deposited on / Si, the sputtering power is 200W, the deposition temperature is 550°C, and the deposition direction is the substrate Pt / SiO 2 The (002) surface of / Si is the epitaxial surface, and the Ar ion beam bombardment is carried out at the same time, and the direction of the bombardment is the same as that of the substrate Pt / SiO 2 The direction of the (002) plane of / Si is 45°, the bombardment energy is 1000 electron volts, and the ion beam bombardment dose is 1×10 8 / cm 2 , and then returned to normal pressure and annealed at 700°C for 1.2 hours, and applied a voltage of 100V or -100V between the surface of the deposited material and the back of the substrate, and the doped alum...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Curie pointaaaaaaaaaa
thicknessaaaaaaaaaa
Curie pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high temperature resistant multiferroic aluminum nitride film and a preparation method thereof. The molecular formula of the material is Alx(AyB1-y)1-xNz; wherein, x represents the mole fraction of Al, and the value is 0.85-0.95; y is 0.45-0.8. The aluminum nitride prepared by the invention has ferroelectric and ferromagnetic properties at the same time, and the ferroelectric and ferromagnetic Curie temperature reaches 450 degrees centigrade, the magnetism can be modulated by the electric field, and the ferroelectricity can also be regulated by the magnetic field.

Description

technical field [0001] The invention belongs to the field of materials, and relates to a high-temperature resistant multiferroic aluminum nitride film and a preparation method thereof. Background technique [0002] At present, the rapid development of the field of information electronics has led people to devote themselves to the multifunctional development of materials to quickly store and process massive amounts of information, and multiferroic materials are one of the most concerned. However, the single-phase multiferroic materials discovered so far have low Curie temperature and poor high temperature resistance. It is urgent to find new materials with high Curie temperature and high working temperature. At present, the literature has reported ferromagnetic or piezoelectric aluminum nitride materials, but no literature has reported that aluminum nitride has both ferroelectric and ferromagnetic properties, and the ferroelectric and ferromagnetic Curie temperature reaches 4...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/06C01F7/00
Inventor 曾飞刘宏燕王光月潘峰
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com