Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

X-and-Ku-waveband power-adjustable microwave source

A microwave source and ku-band technology, applied to the circuit components of the time-of-flight electron tube, the coupling device of the time-of-flight electron tube, etc., can solve the problems of low working frequency band, complicated RBWO adjustment method, narrow tuning bandwidth, etc., and achieve The effect of simplifying the adjustment method, reducing the electron beam density and increasing the adjustment range

Active Publication Date: 2016-04-27
NAT UNIV OF DEFENSE TECH
View PDF2 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The purpose of the present invention is to provide an adjustable high-power microwave source in the X and Ku bands, which solves the technical problems of the above-mentioned conventional frequency tuning RBWO adjustment methods are complicated, the tuning bandwidth is narrow, and the working frequency band is low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • X-and-Ku-waveband power-adjustable microwave source
  • X-and-Ku-waveband power-adjustable microwave source
  • X-and-Ku-waveband power-adjustable microwave source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] The accompanying drawings constituting a part of this application are used to provide further understanding of the present invention, and the schematic embodiments and descriptions of the present invention are used to explain the present invention, and do not constitute an improper limitation of the present invention.

[0044] figure 1 It is a structural schematic diagram of the mechanical frequency modulation RBWO disclosed in the prior art 1 mentioned in the introduction part of the background. Although the paper discloses the experimental results, it only gives the following figure 1 The structural schematic diagram shown does not fully disclose its specific technical solution. Therefore, it is only possible to briefly introduce the approximate connection relationship of the structure based on the content disclosed in prior art 1. The structure includes a cathode seat 101', a cathode 102', an anode outer cylinder 103', a cut-off neck 104', a drift section 112', a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an X-and-Ku-waveband power-adjustable microwave source. The device work mode can be changed through regulating the length of an inner conductor, and the X-and-Ku-waveband crossing conversion of the work frequency can be realized.

Description

technical field [0001] The invention relates to the technical field of microwave source devices, in particular to an adjustable high-power microwave source in X and Ku bands. Background technique [0002] High-power microwaves usually refer to electromagnetic waves with a microwave pulse peak power greater than 100MW and a frequency between 1GHz and 300GHz. Since the first high-power microwave source appeared in the early 1970s, high-power microwave source technology has developed rapidly due to the wide range of application requirements in civil and military fields. [0003] Frequency tunability is one of the important development directions of high-power microwave sources, and has important application value in the fields of industry and national defense. The frequency tuning methods of high-power microwave sources mainly include electrical tuning and mechanical tuning. Electrical tuning refers to the realization of operating frequency tuning by changing the applied volt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J23/24H01J23/36
CPCH01J23/24H01J23/36
Inventor 葛行军贺军涛李明珠张军张强张庆林周冠卿张兴
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com