Microchip laser system with low time jitter picosecond pulse output

Abstract

The invention relates to a microchip laser system with low time jitter and picosecond pulse output. The microchip laser system comprises a pumping coupling device, a beam splitter mirror and a microchip laser and also comprises an external cavity type semiconductor pulse laser, wherein the pumping coupling device comprises a first lens and a second lens, the microchip laser comprises a coupling output mirror, a gain medium, a semiconductor saturable absorber and a heat sink, the pumping coupling device is arranged on an output light path of the external cavity type semiconductor pulse laser, pumping light output from the external cavity type semiconductor pulse laser is incident to the second lens after being collimated by the first lens in the pumping coupling device and converged to form a convergence beam through the second lens, the gain medium receives picosecond pulse laser generated by the pumping light, and the picosecond pulse laser is output by the coupling output mirror. By the microchip laser system, the absorption quantity of the laser gain medium on the pumping light is increased, thus, the conversion efficiency of the microchip laser is improved, the working threshold value of the microchip laser is reduced, the damage threshold value of the microchip laser is increased, and the time jitter of picosecond pulse laser output is also reduced.

Description

technical field [0001] The invention belongs to the field of passive Q-switched microchip lasers with picosecond pulse output, in particular to a passive Q-switched microchip laser system with low time jitter picosecond pulse output pumped by an external cavity semiconductor pulse laser. Background technique [0002] Picosecond pulses can be obtained by passively Q-switching microchip lasers. Compared with the method of obtaining picosecond pulses using mode-locking technology, passive Q-switching microchip lasers have the advantages of small size, low price, and high mechanical stability. The shorter the cavity length of the laser cavity, the shorter the pulse width of the passive Q-switched pulse. In order to obtain a passive Q-switched pulse output of about 100 picoseconds, generally the equivalent cavity length of the entire microchip laser is less than two hundred microns, and a semiconductor saturable absorber (SESAM) is used as a passive Q-switched device to further r...

AI Technical Summary

Problems solved by technology

[0004] For ordinary semiconductor lasers, when the output power increases, the temperature of the laser rises, and the laser wavelength red shifts; at this time, the gain medium in the microchip laser pumped by ordinary semiconductor lasers weakens the absorption ability of the pump light, and the laser threshold increases. , and the conversion efficiency is lower, the pump light absorbed by the semiconductor saturable absorber increases, the heat generated increases, the temperature difference increases, and the thermal stress increases, causing damage to the semiconductor saturable absorber, which also causes the microchip laser to fail to work

In addition, the spectral width of ordinary semiconductor lasers is generally 2-3nm, and the wavelength varies greatly with temperature and output power, which will cause a large time jitter of the pulse train output by passive Q-switched microchip lasers

Images