Cyclic deposition method for thin film and manufacturing method for semiconductor, and semiconductor device

Abstract

According to one embodiment of the present invention, a cyclic method for depositing a thin film comprises a step for depositing an oxide film and a plasma processing step, wherein the step for depositing an oxide film repeatedly performs: a deposition step for depositing an object with a silicon thereon by injecting a silicon precursor into a chamber loaded with the object; a first purge step for removing an unreacted silicon precursor and a reaction byproduct from the inside of the chamber; a reaction step for forming the deposited silicon onto an oxide film comprising a silicon by introducing a first reaction source comprising oxygen into the chamber; and a second purge step for removing the unreacted first reaction source and the reaction byproduct from the inside of the chamber, and wherein the plasma processing step processes the oxide film comprising the silicon by introducing the plasma generated from the second reaction source comprising nitrogen into the chamber.

Description

technical field [0001] The present invention relates to a thin film cyclic evaporation method, a semiconductor manufacturing method and a semiconductor element, and more particularly relates to a thin film cyclic evaporation method for treating an oxide film with plasma containing nitrogen, a semiconductor manufacturing method, and a semiconductor element. Background technique [0002] Recently, with the development of the semiconductor industry and the demands of users, electronic equipment has become more highly integrated and high-performance. Accordingly, semiconductor elements, which are the core components of electronic equipment, are also required to be highly integrated and high-performance. However, it is difficult to achieve a fine structure for high integration of semiconductor elements. [0003] For example, a thinner insulating film is required to realize a fine structure, but if the thickness of the insulating film is formed thinner, a problem arises that the f...

AI Technical Summary

Problems solved by technology

However, it is difficult to achieve a fine structure for the high integration of semiconductor elements

[0003] For example, a thinner insulating film is required to realize a fine structure, but if the thickness of the insulating film is formed thinner, there will be a problem that the film quality such as insulating properties will deteriorate

In addition, it is difficult to obtain excellent step coverage while forming a thin film thickness

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