Thin film cyclic evaporation method, semiconductor manufacturing method and semiconductor element
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficult film thickness, difficult microstructure, insulation properties and other film quality degradation, so as to improve erasing speed, Excellent effect of step coverage
Active Publication Date: 2019-07-12
EUGENE TECH CO LTD
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Problems solved by technology
However, it is difficult to achieve a fine structure for the high integration of semiconductor elements
[0003] For example, a thinner insulating film is required to realize a fine structure, but if the thickness of the insulating film is formed thinner, there will be a problem that the film quality such as insulating properties will deteriorate
In addition, it is difficult to obtain excellent step coverage while forming a thin film thickness
Method used
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[0033] Below, refer to Figure 1 to Figure 12 Preferred embodiments of the present invention are described in more detail. The embodiments of the present invention can be modified in various ways, and it should not be construed that the scope of the present invention is limited by the embodiments described below. This embodiment is provided to explain the present invention in more detail to those skilled in the art to which the present invention pertains. Therefore, the shape of each element appearing in the drawings may be exaggerated in order to emphasize clearer illustration.
[0034] figure 1 is a flowchart showing a thin film circulation evaporation method according to an embodiment of the present invention. like figure 1 As shown, a substrate is loaded inside a cavity of a semiconductor manufacturing apparatus (S100). An oxide film is deposited on the substrate loaded in the chamber (S200). In order to deposit the oxide film, a silicon vapor deposition step (S210), ...
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The present invention relates to a thin film cycle evaporation method. According to an embodiment of the present invention, it includes: an oxide film evaporation step, repeatedly injecting a silicon precursor into a cavity loaded with an object and evaporating silicon on the object. The vapor deposition step, the first cleaning step of removing the unreacted silicon precursor and reaction by-products inside the chamber, supplying the first reaction source containing oxygen to the inside of the chamber to form the vapor-deposited silicon into a silicon-containing The reaction step of the oxide film and the second purification step of removing the unreacted first reaction source and reaction by-products inside the chamber; and the plasma treatment step of supplying the inside of the chamber generated by the second reaction source containing nitrogen. The above-mentioned oxide film containing silicon is treated with plasma, and before the above-mentioned plasma treatment step, the above-mentioned oxide film evaporation step is repeated 3 to 50 times, and the above-mentioned oxide film layer evaporation step and the above-mentioned plasma treatment step are repeated.
Description
technical field [0001] The present invention relates to a thin film cyclic evaporation method, a semiconductor manufacturing method and a semiconductor element, and more particularly relates to a thin film cyclic evaporation method for treating an oxide film with plasma containing nitrogen, a semiconductor manufacturing method, and a semiconductor element. Background technique [0002] Recently, with the development of the semiconductor industry and the demands of users, electronic equipment has become more highly integrated and high-performance. Accordingly, semiconductor elements, which are the core components of electronic equipment, are also required to be highly integrated and high-performance. However, it is difficult to achieve a fine structure for high integration of semiconductor elements. [0003] For example, a thinner insulating film is required to realize a fine structure, but if the thickness of the insulating film is formed thinner, a problem arises that the f...
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IPC IPC(8): H01L21/205
CPCH01L21/02532H01L21/0262H01L21/02164H01L21/02274H01L21/0228H01L21/02332H01L21/0234C23C16/402C23C16/45536H01L29/40117H01L21/205H01L21/0214H01L29/42364H01L29/518H01L29/66833H01L29/792
Inventor 金海元金锡允
Owner EUGENE TECH CO LTD