Air inlet system and semiconductor processing device

Abstract

The invention provides an air inlet system and a semiconductor processing device. The system comprises a first air path for conveying unsaturated vapor, a second air path for conveying saturated vapor, a third air path connecting with a reaction cavity, and a buffer container; the buffer container comprises multiple air inlets and one air outlet, wherein the multiple air inlets are located at the same side of the buffer container, and the air outlet is located at the opposite side of the multiple air inlet side on the buffer container; the diameter of the buffer container is larger than the diameter of each air inlet; the first air path and the second air path are parallel to each other and are connected with the air inlets correspondingly; the third air path is connected with the air outlet. The provided air inlet system has no influence on maximum flow of conveyed gas; by use of the system, the offset function on saturated vapor because the saturated vapor has larger air pressure than that of the unsaturated vapor during the mixing process of the two vapors is avoided so that normal air inlet of multiple air paths is guaranteed.

Description

technical field [0001] The present invention relates to the technical field of microelectronics, in particular, to an air intake system and a semi- [0002] Conductor processing equipment. Background technique [0003] In semiconductor processing equipment used to manufacture integrated circuits (IC) or MEMS devices, it is usually necessary to mix multiple process gases into the process chamber. For example, inductively coupled plasma (ICP) processing equipment is a commonly used The equipment generally excites a mixed gas containing a variety of gases to form a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles undergo various physical and chemical reactions with the substrate, thereby Change the surface properties of the substrate to achieve the purpose of deposition or etching. [0004] For the process gas of this type of equipment, a type of gas that is gaseous at normal temperature is usually ca...

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Problems solved by technology

[0006] However, the above air intake system will have the following problems in practical application: since the pressure of saturated steam gas in pipeline B is much lower than the pressure of the mixed gas of unsaturated steam gas in pipeline A, this makes pipeline B saturated When the steam gas enters the pipeline C at the tee Y, it will be affected by the impact of the unsaturated steam gas in the A pipeline, which will cause the flow rate of the saturated steam gas actually entering the pipeline C to decrease or stop flowing, or even worse. When it is serious, the unsaturated steam gas in pipeline A will pour back into the cylinder of saturated steam gas through pipeline B, forming an A-Y-B flow path

[0008] one, such as image 3 As shown, since pipeline A and pipeline B are perpendicular to each other, the mixed gas of saturated steam gas in pipeline B and unsaturated steam gas in pipeline A is mixed in a vertically intersecting inlet manner at the tee Y , when the air pressure in pipeline A is significantly higher than that in pipeline B in this air intake method, it is easy to produce the impact of the gas in pipeline A on the gas in pipeline B, and because the flow-limiting gasket D has a limited effect on reducing the gas pressure. When the flow rate in pipeline A is very large, the above-mentioned counteracting effect cannot be avoided, which will cause the pressure of saturated steam gas in pipeline B to be unstable and the gas flow rate to decrease, resulting in saturation The actual flow of steam gas does not match the set flow

Moreover, the unstable pressure of saturated steam gas will also affect the uniformity of gas mixing, thereby affecting the process results

[0009] Second, the above-mentioned flow-limiting gasket D has the function of limiting the maximum flow rate of the gas, that is, this is equivalent to limiting the maximum flow rate of the mixed gas of the unsaturated steam gas, which is also unfavorable for the window of the debugging process

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