Electrochemical treatment method for improving surface properties of copper indium gallium selenide thin film

A technology of copper indium gallium selenide and surface properties, which is applied in the field of solar cells, can solve the problems of easy introduction of other impurities, serious environmental pollution, complicated operation, etc., and achieves the effects of environmental friendliness, stable solution system, and high recycling rate.

Active Publication Date: 2016-06-01
CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The main purpose of the present invention is to provide an electrochemical treatment method for improving the surface properties of copper indium gallium selenide th

Method used

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  • Electrochemical treatment method for improving surface properties of copper indium gallium selenide thin film
  • Electrochemical treatment method for improving surface properties of copper indium gallium selenide thin film
  • Electrochemical treatment method for improving surface properties of copper indium gallium selenide thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Example 1 This example is an electrochemical method to etch the surface of a copper indium gallium selenide film

[0044] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass, and a copper indium gallium selenide film 2 with a thickness of 1 μm is deposited on the Mo layer 4 by electrochemical deposition, and then annealed in a quartz tube furnace. The scanning electron microscope image of the copper indium gallium selenide thin film 2 after selenization is shown in figure 2 .

[0045] Step (1): Connect the selenized copper indium gallium selenide thin film 2 to the working electrode of the electrochemical workstation 1, the connecting part is only the Mo layer 4, soak in absolute ethanol solution for 1 to 2 minutes, remove the surface stained with particulate impurities;

[0046] Step (2): preparation treatment solution 7, treatment solution 7 is the mixed solution of potassium sulfite, potassium sulfide and deionized water, the concentration of pot...

Embodiment 2

[0049] Example 2 This example is an electrochemical method to etch the surface of the copper indium gallium selenide film

[0050] Metal Mo with a thickness of 1 μm is deposited on the soda lime glass, and a copper indium gallium selenide film 2 with a thickness of 1 μm is deposited on the Mo layer 4 by pulse electrochemical deposition, and then annealed in a quartz tube furnace.

[0051] Step (1): Connect the selenized copper indium gallium selenide thin film 2 to the working electrode of the electrochemical workstation 1, the connecting part is only the Mo layer 4, soak in absolute ethanol solution for 1 to 2 minutes, remove the surface stained with particulate impurities;

[0052] Step (2): Prepare treatment solution 7, treatment solution 7 is a mixed solution of sodium sulfite, sodium sulfide and deionized water, the concentration of sodium sulfite in the mixed solution is 0.25M / L, and the concentration of sodium sulfide in the mixed solution is 0.35M / L, pH=13;

[0053]...

Embodiment 3

[0055] Example 3 This example is an electrochemical method to etch the surface of the copper indium gallium selenide film

[0056] Metal Mo with a thickness of 1 μm is deposited on the soda lime glass, and a copper indium gallium selenide film 2 with a thickness of 1 μm is deposited on the Mo layer 4 by pulse electrochemical deposition, and then annealed in a quartz tube furnace.

[0057] Step (1): Connect the selenized copper indium gallium selenide thin film 2 to the working electrode of the electrochemical workstation 1, the connecting part is only the Mo layer 4, soak in absolute ethanol solution for 1 to 2 minutes, remove the surface stained with particulate impurities;

[0058] Step (2): preparation treatment solution 7, treatment solution 7 is the mixed solution of potassium sulfite, sodium sulfide and deionized water, the concentration of potassium sulfite in the mixed solution is 0.25M / L, the concentration of sodium sulfide in the mixed solution The concentration is ...

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Abstract

The invention relates to the technical field of solar cells, and specifically discloses an electrochemical treatment method for improving surface properties of a copper indium gallium selenide thin film. The method includes the steps of: after selenylation, placing the copper indium gallium selenide thin film in an electrochemical workstation, only connecting a Mo layer with a working electrode, and soaking in absolute ethyl alcohol to remove particle impurities; preparing a treatment solution which is a mixed solution of sulfite, metal sulfide and deionized water with a pH value of 8 to 14; and applying an electrical signal which is any one of a cyclic voltammetry electrical signal, constant voltage electrical signal, constant current electrical signal, pulse voltage electrical signal or pulse current electrical current, taking out the copper indium gallium selenide thin film after 1 to 600 seconds, using the deionized water to wash, and drying with high-purity nitrogen. The method provided by the invention can effectively dissolve protrusions on the surface of the thin film, improves the roughness of the surface of the thin film, removes a secondary phase of the surface, optimizes the surface quality of the thin film, is environment-friendly, and facilitates industrial promotion.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to an electrochemical treatment method for improving the surface properties of a copper indium gallium selenide thin film. Background technique [0002] Solar energy is the most abundant energy among many renewable energy sources. The energy of global sunlight for one hour is equivalent to the energy consumption of the earth for a year, which is much higher than wind energy, geothermal energy, hydropower, ocean energy, biomass energy and other energy sources. The proportion of solar energy in the future energy structure will increase, and it is conservatively estimated that this proportion will exceed 60% in 2100. Therefore, solar cell research is an important topic for future energy development. [0003] copper indium gallium selenide (CuIn x Ga y Se z , can also include sulfur, abbreviated as CIGS) thin-film photovoltaic panels have become a research hotspot in the photovo...

Claims

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Application Information

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IPC IPC(8): H01L31/18C25F3/12
CPCY02P70/50
Inventor 何绪林梅军廖成刘江叶勤燕刘焕明
Owner CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
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