Etching mask group and substrate etching method applying same
A mask set and substrate technology, applied in the field of microelectronics, can solve the problems of fast lateral shrinkage, straight sidewall modification, poor etching resistance of photoresist masks, etc. Lateral shrinkage speed, the effect of reducing corners
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[0024] In order to enable those skilled in the art to better understand the technical solution of the present invention, the following describes in detail the etching mask set provided by the present invention and the substrate etching method using the same in conjunction with the accompanying drawings.
[0025] First of all, it should be noted that the mask set for etching provided by the present invention is fabricated on the surface of the substrate by using two photolithography processes to form the required patterns. Specifically, it is necessary to fabricate on the surface of the substrate. The mask set for etching is then used to etch the desired pattern from the mask set for etching using a photolithography process.
[0026] image 3 These are cross-sectional / top two views of the mask set for etching provided by the embodiments of the present invention. See image 3 The mask set for etching includes a first mask layer 11 and a second mask layer 12, which are arranged from t...
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