42results about How to "Fine graphics" patented technology

The invention discloses a photosensitive resin combination and a method of preparing a quantum dot pattern from the photosensitive resin combination. The photosensitive resin combination is prepared from quantum dots which are dispersed in the photosensitive resin combination and are respectively provided with a modified layer. The method of preparing the quantum dot pattern from the photosensitive resin combination comprises the steps: with the photosensitive resin combination as a photoresist, carrying out coating, exposure and development to obtain the quantum dot pattern. The method of preparing the quantum dot pattern from the photosensitive resin combination has the advantage of being simple, the fine graph, the boding stability of the combination and a substrate, the difficulty in abscission, the high resolution and the like can be achieved. In addition, with the adoption of the method, based on existing equipment, the mass production of the quantum dot pattern can be realized, and the application potential of the quantum dots is greatly improved.

The present invention relates to a radio communications terminal (10) comprising a screen (12) controlled by a control module (3) and also at least two different types of microprocessor (1, 2), said first type of microprocessor (1) improving the graphics capabilities of said terminal (10) and driving said control module (3) of the screen (12), said second type of microprocessor (2) handling the other functions of said terminal (10), the terminal being characterized in that in standby mode said first type of microprocessor (1) is deactivated while second type of microprocessor (2) drives said control module (3) of the screen (12).

The invention belongs to the technical field of attenuators and relates to a method for manufacturing a microwave thin film attenuator. The method comprises the steps that a medium substrate is processed through a laser cutting method, and a through hole is formed in the position of a grounding electrode; metallization of the surface of the medium substrate and the inside of through hole is achieved through a vacuum sputtering method, and a metallized film layer structure is formed; a attenuator diagram is formed through the photolithography technique; a conductor circuit is thickened through electroplating; thermal oxidation resistance adjustment is conducted on the whole piece of attenuator through a heating method, a probe station is utilized to conduct index testing on the attenuator; independent attenuator diagrams are formed in a cutting method, and the lateral metallization effect is presented on the four corners of the attenuator. The method for manufacturing the microwave thin film attenuator can achieve the fine circuit diagrams, is favorable for being minimized, meets the requirements for the occasions of high frequency application, avoids single sheet manual edge wrapping and grounding, improves production efficiency, and is favorable for volume production.

The invention relates to a display device of a flat panel display (FPD) and an etching liquid composition for the transparent conductive film used for the electrodes of a solar cell or a touch control panel, and provides an etching liquid composition for etching transparent conductive films such as copper and/or copper alloy film and indium tin oxide simultaneously, which includes hydrochloric acid, ferric chloride or copper chloride and water, wherein the concentration of hydrochloric acid is from 15.0 to 36.0 weight%, and the concentration of ferric chloride or copper chloride is from 0.05 to 2.00 weight%.

Systems, methods, and devices provide alarms and alerts in an on-body networked diabetes management system. Methods may include receiving glucose sensor data from a continuous glucose monitor and determining a dosage of insulin delivery based at least in part on the glucose sensor data. The method may include detecting an alarm or alert condition, and sending a wireless communication regarding the alarm or alert condition to a remote user-interface device. The method may include triggering an audible, visual, or haptic alarm or alert on the insulin delivery device unless an acknowledgement of the alarm or alert condition is received within a predetermined period of time.

The invention provides an etching mask group and a substrate etching method applying the same. The etching mask group comprises a first mask layer made of a photoresist material, and a second mask layer made of a material capable of improving an etching selectivity ratio relative to a substrate, wherein the first mask layer is arranged on the surface of the substrate, the second mask layer is arranged on the first mask layer; and the widths of the bottom portions of respective patterns of first mask layer and the second mask layer are arranged in such a way that the inclination angle of a preset connecting line between the first mask layer and the second mask layer is consistent with a fixed inclination angle of the first mask layer. The etching mask group provided by the invention can realize the purpose of improving the pattern morphology of the substrate.

The invention particularly relates to sintered type electronic conductive gold paste and a preparation method thereof. The gold paste comprises the following components in parts by weight: 70-80% of gold powder, 5-10% of glass powder, 10-20% of an organic carrier and 0.5-3% of an assistant. The raw materials are stirred and mixed uniformly according to a proportion, and a mixture is grinded and filtered to obtain the sintered type electronic conductive gold paste. The cofiring matching between the sintered type electronic conductive gold paste and a ceramic substrate is good; after a film is formed by sintering, the square resistance of a film layer is less than or equal to 5 milliohm/square, and the film layer is high in compactness; the surface is flat and smooth; the stripping adhesiveforce is larger than or equal to 50N/(2*2)mm<2>; and the gold paste does not contain harmful elements such as lead, cadmium and the like, is environment-friendly, simple in preparation process and easy to industrialize, and can be widely applied to a thick-film hybrid integrated circuits (HIC), a large-scale integrated circuit (LSI), a ceramic encapsulated integrated circuit (IC), a thermistor, asemiconductor package, a multilayer wiring circuit, a hybrid integrated circuit and the like.

The invention belongs to the technical field of carbon micro electro mechanical system, and provides a preparation method of a carbon microelectrode array structure. The method comprises steps of: (1) photolithography to obtain a carbon micro structure part of the array; (2) metal precipitation: precipitating one or more metal layers on the surface of the obtained carbon micro structure; and (3) pyrolysis: carrying out multiple steps of pyrolysis in an inert gas atmosphere or inert mixed gas atmosphere and at different temperatures. According to the above steps, carbon microelectrode array structure with nano structure integrated on the surface can be grew and obtained. The method of the invention combines thick photoresist lithography, metal precipitation and pyrolysis, so that the obtained micro-nano integrated structure has large specific surface area. The method of the present invention can be used in a micro electro mechanical system, and has the advantages of simple technology, low cost, high controllability, mass growth and good structure. The obtained micro-nano integrated structure has good electrical properties, and can be used as a motor and be widely applied to microcomputer fields, such as the minicell and micro electrochemical sensor, etc.

The present invention discloses a device for controlling display of mobile terminal and the method thereof. The device includes: a mobile terminal for receiving, calculating and displaying information; the mobile terminal being configured with an information reading apparatus for reading information on an information carrier; a character storage for storing characters of different types and representing forms; a calculating apparatus for matching the read information with stored information in the character storage, and for generating correspondent character representing information and location information; a displaying apparatus for displaying graphic and text information. This invention can display the contents in the originality of advertisements at once by identifying a barcode with the mobile terminal. The advertisements can be displayed more rapidly and be represented finer, so that users are more attracted to take actions such as reading more advertisements from the network, logging in to take part in activities, placing orders and so on.

The invention discloses a formation method of a semiconductor device. The formation method comprises steps of: providing a substrate, a grid membrane arranged on the surface of the substrate and an initial mask layer arranged on the surface of the grid membrane; forming a graphical photoresist layer on the initial mask layer; taking the graphical photoresist layer as a mask, and etching the initial mask layer to form multiple separated hard mask layers, wherein polymer impurities are formed on the hard mask layers and the surface of the gate membrane; using the ashing technology to remove the graphical photoresist layer, wherein the ashing technology comprises first ashing technology and second ashing technology which are carries out successively, the first ashing technology is suitable for removing of silicon ions in the polymer impurities and the second ashing technology is suitable for removing carbon ions in the polymer impurities; after the ashing technology is performed, carrying out wet-process cleaning processing on the hard mask layers and the grid membrane; taking the hard mask layers as masks and etching the grid membrane so as to form multiple separated grid electrodes on the substrate; and forming a source region and a drainage region in the substrate on two sides of the grid electrodes. In this way, the quality of the formed grid electrodes is improved.

The invention discloses an urban mapping method and device. The urban mapping method comprises the following steps of receiving a remote sensing image of a target city input by a user and obtaining remote sensing image data; obtaining a target vegetation index of the remote sensing image based on the remote sensing image data; receiving original light data of the target city input by the user; carrying out normalization and re-sampling processing on the original light data to obtain target light data; obtaining a city index based on the target vegetation index and the target light data; and carrying out mapping based on the city index to obtain a city effect drawing of the target city. The urban mapping method has simple and convenient processing process, high automation degree and high processing efficiency and does not need a complicated preprocessing process; and furthermore, the city index is obtained based on the target vegetation index and the target light data, the city index is utilized to carry out mapping, the mapping effect is good, the precision is high and the method is easy to popularize and apply.

The invention discloses a method for preventing peeling of a photoresist. The method is used after an ion implantation process and before an etching process, and specifically comprises the following steps: 1) carrying out treatment on a silicon substrate surface, so that the silicon substrate surface not coated with the photoresist is changed to be hydrophilic; 2) treating the silicon substrate surface by employing water, so that a silicon substrate not coated with the photoresist absorbs the water and is expanded; and 3) carrying out curing treatment on the photoresist. According to the method disclosed by the invention, after the ion implantation, through firstly treating the silicon substrate surface by employing an ASH plasma so that the exposed silicon substrate surface is changed to be hydrophilic, and then treating the silicon substrate surface by employing the water so that the exposed silicon substrate absorbs the water and is expanded, a stress produced by colloid shrinkage when UVC is cured is offset; and thus, the photoresist, when being etched, is prevented from occurring the peeling with the silicon substrate, and the etching is guaranteed to obtain good graphics.

The invention relates to the technical field of LCD testing, and in particular, relates to a method for detecting the visual angle deviation direction of an LCD full-visual-angle VA. According to the method for detecting the visual angle deviation direction of the LCD full-visual-angle VA, a video magnifier suitable for the product is selected according to the characteristics of the full-visual-angle LCD. The focal length is automatically and finely adjusted through an automatic detection judgment program. When the definition is optimal, a standard pattern at a fixed position is collected; the automatic detection program can automatically detect the nesting deviation direction and the deviation value of an ITO circuit, combined up and down, of the LCD, display the detected deviation value and judge whether the visual angle deviation value of the full-visual-angle product meets the requirement or not. In addition, the program can also clearly detect the defects of LCD graphic font convex-concave badness, graphic font thickness deformation badness, short circuit, missing scratching badness and the like. The full-visual-angle LCD precision detection device is high in detection precision, effectively improves the detection efficiency, and is accurate and effective in detection.

The invention relates to a production method of a pattern color mixing film. The production method comprises the following preparation steps: step 1, preparing a conductive solution; step 2, coating atransparent film with the conductive solution by using a reverse plate coating roller, wherein the resistance of the coated surface conductor reaches 40-70 [ohm]/square; 3, respectively fixing the positive electrode pattern conducting layer film and the negative electrode pattern conducting layer film on two sides of a liquid crystal coating machine, wherein the positive electrode conducting region and the negative electrode conducting region are oppositely arranged; coating PDLC liquid crystals between the positive electrode pattern conducting layer thin film and the negative electrode pattern conducting layer thin film; and drying and rolling to obtain the pattern color mixing film. The pattern color mixing film prepared by the invention is simple in structure and easy to manufacture; and different reverse coating rollers can be manufactured according to the requirements of customers to obtain pattern toning films with different patterns, and the pattern contour lines are manufactured by printing, so that the patterns are exquisite and fine, and the display effect is good.

Disclosed is a method for preparing a crystal silicon cell metal electrode. The method comprises the following steps: heating a slurry on a slurry conveyer belt below a laser through the laser beam of the laser, enabling the slurry to be transferred to the surface of a crystal silicon cell below the slurry conveyor belt through the meshes of the slurry conveyor belt, and depositing a metal electrode on the surface of the crystal silicon cell. The front surface grid line width of a photovoltaic cell metal electrode prepared by the method can be smaller than 20 [mu]m, the height can be 10 to 15 [mu]m, and the figure high precision can reach 5 [mu]m, which is far higher than the 25 [mu]m figure precision of screen printing. Silver ink is transferred to an emitter electrode through a laser transfer technology so that a finer electrode structure and a superior aspect ratio can be formed by using the method provided by the invention, compared to a conventional screen printing technology. The method provided by the invention has great application potential in the field of commercial high-efficient crystal silicon cell preparation, and represents a mainstream development trend in the technology of making a cell front surface electrode grid line.

The invention discloses a method for measuring tunneling construction precision at two ends of an extra-long tunnel. The method comprises the following steps: rechecking and encrypting mapping base points arranged in the whole route according to the present coordinate control point and benchmark data; using double-frequency receivers for collecting field data of horizontal control points, and synchronously starting up and collecting satellite signals under the condition of strictly centering and leveling; synchronously observing at different horizontal control points by multiple receivers, moving to other horizontal control points for synchronously observing after finishing the synchronous observation in a period of time, and forming a synchronous pattern while synchronously observing at each time. During the measuring process, different synchronous patterns are generally connected by a plurality of common points; the whole GPS network is formed by the synchronous patterns; measuring points are uniformly distributed in a control network, have a mutual restraining effect to the whole control network and can effectively increase the measuring precision.

A method for forming a semiconductor structure comprises the following steps: providing a layer to be etched; a first sacrificial layer is formed on the surface of the to-be-etched layer, a first opening extending in the first direction is formed in the first sacrificial layer, and the first opening exposes the surface of the to-be-etched layer; forming an initial second sacrificial layer on the first sacrificial layer and in the first opening; forming an initial first mask layer on the surface of the initial second sacrificial layer; a plurality of patterning steps are carried out on the initial first mask layer to form a first mask layer, a plurality of partition mask openings distributed in the first direction are formed in the first mask layer, each partition mask opening stretches across the first opening in the second direction, and the second direction is perpendicular to the first direction. Therefore, adjacent patterns with small spacing and good morphology can be transmitted to the to-be-etched layer.