Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing crystal silicon cell metal electrode

A technology of metal electrodes and crystalline silicon cells, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effects of less loss, improved performance, and meeting the requirements of aspect ratio

Active Publication Date: 2014-05-07
HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology has not been applied to the preparation of metal electrodes for silicon crystal batteries.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The method for preparing a metal electrode of a crystalline silicon cell is as follows:

[0028] Prepare lasers, slurry conveyor belts, slurry storage devices and crystalline silicon cells to be processed;

[0029] (1) Import the metal electrode pattern edited by the computer into the laser;

[0030] (2) Turn on the slurry conveyor belt, control the speed at 4-5 meters per minute, and open the slurry storage device at the same time to coat the slurry (conventional photovoltaic slurry, such as DuPont series and Samsung series) on the slurry conveyor belt;

[0031] (3) Place the silicon crystal cell under the slurry conveyor belt, and use a laser to align the slurry conveyor belt passing above the silicon crystal cell;

[0032] (4) Turn on the laser, and the laser beam of the laser (the laser power is 8 watts, and the spot diameter is controlled within 20 microns) moves above the slurry conveyor belt passing above the silicon cell according to the metal electrode pattern...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
Login to View More

Abstract

Disclosed is a method for preparing a crystal silicon cell metal electrode. The method comprises the following steps: heating a slurry on a slurry conveyer belt below a laser through the laser beam of the laser, enabling the slurry to be transferred to the surface of a crystal silicon cell below the slurry conveyor belt through the meshes of the slurry conveyor belt, and depositing a metal electrode on the surface of the crystal silicon cell. The front surface grid line width of a photovoltaic cell metal electrode prepared by the method can be smaller than 20 [mu]m, the height can be 10 to 15 [mu]m, and the figure high precision can reach 5 [mu]m, which is far higher than the 25 [mu]m figure precision of screen printing. Silver ink is transferred to an emitter electrode through a laser transfer technology so that a finer electrode structure and a superior aspect ratio can be formed by using the method provided by the invention, compared to a conventional screen printing technology. The method provided by the invention has great application potential in the field of commercial high-efficient crystal silicon cell preparation, and represents a mainstream development trend in the technology of making a cell front surface electrode grid line.

Description

technical field [0001] The invention belongs to the field of manufacturing high-efficiency crystalline silicon solar cells, and in particular relates to a method for preparing metal electrodes of crystalline silicon cells. Background technique [0002] At present, the inkjet printing technology in the photovoltaic industry to prepare metal electrodes mainly relies on resistance heating to generate bubbles to spray silver ink onto the surface of silicon wafers, and form metal electrodes after drying and sintering. This technology is an immature process technology in the manufacturing process of crystalline silicon solar cells. The main problem is that the equipment involved in this technology needs to use a very small ink nozzle aperture (a small nozzle aperture can ensure that the ejected ink droplets are small. , the ink drop is small and the metal grid line can be narrow), it is very easy to be blocked in the working and non-working state, once it is blocked, the nozzle ne...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425Y02E10/50Y02P70/50
Inventor 成文杨晓生
Owner HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com