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Method for preventing peeling of photoresist

A photoresist and ultraviolet light technology, applied in the direction of optics, optomechanical equipment, photoplate making process of pattern surface, etc., can solve the problems of peeling, colloid shrinkage, stress generation, etc., and achieve the effect of avoiding peeling and good graphics

Inactive Publication Date: 2017-05-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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  • Application Information

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Problems solved by technology

However, in this method, when the photoresist is fastened, the colloid will shrink due to the reaction, and stress will be generated, so that the photoresist will be peeled off from the substrate, and will fall off in the further etching process. See figure 1 shown

Method used

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  • Method for preventing peeling of photoresist
  • Method for preventing peeling of photoresist
  • Method for preventing peeling of photoresist

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Embodiment Construction

[0018] In order to have a more specific understanding of the technical content, characteristics and effects of the present invention, the technical solution of the present invention will be further described in detail in conjunction with the accompanying drawings and specific embodiments.

[0019] The method for preventing the photoresist peeling of the present embodiment, its specific processing process flow is as follows (see figure 2 ):

[0020] Step 1, pre-treat the silicon substrate with the oxide film with HMDS (hexamethyldisilazane) to change the hydrophilicity of the surface of the silicon substrate to lipophilicity to facilitate the adhesion of the photoresist.

[0021] Step 2, spin-coating and baking the photoresist.

[0022] Step 3, using a mask to expose and develop to form the desired etching pattern.

[0023] Step 4, performing an ion implantation (IMP) process.

[0024] In step 5, ASH plasma (plasma) etching is used to process the surface of the silicon subs...

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PUM

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Abstract

The invention discloses a method for preventing peeling of a photoresist. The method is used after an ion implantation process and before an etching process, and specifically comprises the following steps: 1) carrying out treatment on a silicon substrate surface, so that the silicon substrate surface not coated with the photoresist is changed to be hydrophilic; 2) treating the silicon substrate surface by employing water, so that a silicon substrate not coated with the photoresist absorbs the water and is expanded; and 3) carrying out curing treatment on the photoresist. According to the method disclosed by the invention, after the ion implantation, through firstly treating the silicon substrate surface by employing an ASH plasma so that the exposed silicon substrate surface is changed to be hydrophilic, and then treating the silicon substrate surface by employing the water so that the exposed silicon substrate absorbs the water and is expanded, a stress produced by colloid shrinkage when UVC is cured is offset; and thus, the photoresist, when being etched, is prevented from occurring the peeling with the silicon substrate, and the etching is guaranteed to obtain good graphics.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to the treatment process of semiconductor devices after ion implantation and before etching, and more specifically, to a method for preventing photoresist from peeling off. Background technique [0002] Photoresist, also known as photoresist, is a light-sensitive mixed liquid composed of three main components: photosensitive resin, sensitizer and solvent. After the photosensitive resin is exposed to light, the photocuring reaction can quickly occur in the exposed area, so that the physical properties of the material, especially the solubility and affinity, will change significantly. After being treated with an appropriate solvent, the soluble part can be dissolved, and the desired image can be obtained. [0003] During the semiconductor manufacturing process, a photoresist is usually used as a mask to complete part of the ion implantation. Ion implantation will usua...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16
CPCG03F7/168
Inventor 刘善善吴兵曹俊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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