A monitoring device and method for malicious read-write programs oriented to non-volatile memory

Abstract

The invention discloses a malicious read-write program monitoring device and method facing a nonvolatile memory. The malicious read-write program monitoring device comprises a first module, a second module, a third module and a fourth module. The first module comprises a write frequency management unit, a PM page loss equalization management unit and a PM page malicious write management unit, and the first module is used for recording the write frequency of PM physical pages and all mapping relations of the PM physical pages. The second module comprises a counter, a PM page accumulated hit recorder, an additional register, a random number generation unit and a calculating unit, and is used for detecting the write frequency of the current program on the corresponding physical page. The third module is composed of a decision logic unit, and is used for deciding the malicious degree of the current program and corresponding equalization measures. The fourth module is composed of a DRAM_Reserve list, and is used for managing the physical page corresponding to the program which is determined to be malicious.

Description

technical field [0001] The invention belongs to the technical field of computer system structure, and in particular relates to a monitoring device and method for a malicious read-write program oriented to a non-volatile memory. Background technique [0002] In the design of computer architecture, due to the limitation of PM life, technicians should not only consider the problem of uniform loss, but also prevent malicious programs from writing to PM continuously for a long time, otherwise, PM is very easy to be damaged in a short time. Therefore, the detection and control of malicious programs specifically targeting PM is very necessary and has positive significance. However, there is little research in this area in the prior art. [0003] In this field, the terms involved are as follows. [0004] DRAM: Dynamic Random Access Memory, dynamic random access memory, that is, memory widely used at this stage, is characterized by information loss after power failure, and theoreti...

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Problems solved by technology

[0006] PM: Persistent Memory, non-volatile memory or persistent memory, STTRAM, PCM, and RRAM all belong to PM, which is characterized by no loss of information after power failure, and byte addressing; but the number of reads and writes is limited, and read and write Unbalanced, depending on the material, the PM write time is about 4 to 10 times the read time, and the PM read time is 1 to 4 times slower than DRAM

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