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Terahertz transmitter circuit realized by adopting CMOS process

A transmitter and MOS tube technology, applied in the field of terahertz transmitter circuits, can solve the problems of limited circuit active device performance, poor performance, complex structure, etc., and achieve easy mass production, low cost, and layout area small effect

Inactive Publication Date: 2016-06-15
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the transmitter, the input signal is a useful signal, but as the carrier frequency increases, maintaining high signal energy and ensuring relatively small attenuation has become an inevitable challenge in transmitter design
[0007] Terahertz wave circuits implemented by CMOS technology have been studied, but because CMOS technology devices have poor performance near the cutoff frequency, the performance of active devices in this frequency band is greatly limited.
And because the structure of the transmitter system is relatively complex compared with unit circuits such as oscillators, and many parts inevitably use active devices as the main working devices, the performance deterioration caused by too high operating frequency is greatly increased, so There are few reports on the structural scheme of the transmitter realized in the terahertz band

Method used

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  • Terahertz transmitter circuit realized by adopting CMOS process
  • Terahertz transmitter circuit realized by adopting CMOS process
  • Terahertz transmitter circuit realized by adopting CMOS process

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Embodiment Construction

[0028] A terahertz transmitter circuit implemented by a CMOS process of the present invention will be described in detail below with reference to embodiments and drawings.

[0029] like figure 1 As shown, a terahertz transmitter circuit implemented by a CMOS process of the present invention includes an up-conversion unit 1 for modulating the intermediate frequency signal IF received from the input terminal PA_IN into a radio frequency signal, and the up-conversion unit 1 The signal input end is also connected to the local oscillator unit 2 for generating the local oscillator LO signal, that is, the frequency up conversion unit 1 mixes the local oscillator LO signal and the intermediate frequency IF signal to obtain a modulated signal, and the frequency up conversion unit 1 The signal output end is connected to a power separation unit 3 for dividing the received signal into two identical signals, and one output of the power separation unit 3 is connected to the first amplificat...

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Abstract

The invention relates to a terahertz transmitter circuit realized by adopting a CMOS process. The terahertz transmitter circuit comprises an up-conversion unit used for modulating a received intermediate-frequency signal into a radio-frequency signal; the signal input end of the up-conversion unit is also connected to a local oscillation unit; the signal output end of the up-conversion unit is connected to a power separation unit used for separating the received signal into two same signals; one of the power separation unit is in output connection with a first amplification frequency multiplication unit; the other is in output connection with a second amplification frequency multiplication unit composed of an amplification circuit and a frequency multiplication circuit; the output ends of the first amplification frequency multiplication unit and the second amplification frequency multiplication unit are connected to the input end of a power synthesis unit for synthesizing the received two signals into one signal; and the output end of the power synthesis unit forms the output end of the terahertz transmitter circuit and is connected to an impedance load. The terahertz transmitter circuit disclosed by the invention is realized by adopting the standard CMOS process and has the advantages of being high in integration level, low in cost, easy in large-scale production and the like; and transmitter functions in the terahertz wave frequency band can be realized.

Description

technical field [0001] The invention relates to a terahertz transmitter structure. In particular, it relates to a terahertz transmitter circuit implemented by a CMOS process. Background technique [0002] In recent years, high-speed wireless communication systems are constantly developing towards higher frequency, wider bandwidth, higher integration and lower cost. The terahertz frequency band (300GHz-3THz) is between microwave and infrared, in the transition zone from macroscopic theory to microscopic quantum theory, and in the intersection area of ​​electronics and photonics. The special position determines that it has special properties different from other bands. . The terahertz frequency band is the only last spectrum interval in the electromagnetic spectrum that has not been fully studied and well utilized. Today, when communication frequency bands are increasingly scarce, the research on terahertz wave communication technology is of great significance. [0003] The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04B1/04
CPCH04B1/04H04B1/0458H04B2001/0408
Inventor 毛陆虹刘一波
Owner TIANJIN UNIV