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A spin-transfer torque magnetic storage unit

A technology of magnetic storage unit and spin transfer torque, which is applied in the direction of electrical components, magnetic field controlled resistors, material selection, etc., to achieve the effects of improving stability, improving thermal stability, and reducing storage power consumption

Active Publication Date: 2019-05-21
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problem of the perpendicular magnetic anisotropy magnetic tunnel junction mentioned in the background above, the present invention proposes a spin-transfer torque magnetic storage unit, which overcomes the deficiencies of the prior art in combination with the use of new materials

Method used

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  • A spin-transfer torque magnetic storage unit
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  • A spin-transfer torque magnetic storage unit

Examples

Experimental program
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Effect test

Embodiment 1

[0047] Example 1, such as Figure 5 The magnetic tunnel junction structure shown, where,

[0048] The reference layer is composed of a mixed metal material cobalt-iron-boron CoFeB, which generates strong perpendicular magnetic anisotropy (PMA) with the tunneling barrier layer to maintain the magnetization direction and provides a reference for the free layer;

[0049] The tunneling barrier layer is made of magnesium oxide MgO, which is used to generate a tunneling effect to transmit spin signals;

[0050] The free layer is composed of a mixed metal material cobalt-iron-boron CoFeB, which produces perpendicular magnetic anisotropy (PMA) with the tunneling barrier layer, and realizes free flipping under the action of spin transfer torque;

[0051] The buffer layer is made of metal tantalum Ta. When the thickness is 0.4 nanometers, ferromagnetic coupling is shown between the free layer and the top magnetic layer; when the thickness is 0.7 nanometers, antiferromagnetic coupling i...

Embodiment 2

[0056] Example 2, such as Figure 6 The magnetic tunnel junction structure shown, where,

[0057] The reference layer is composed of a mixed metal material cobalt-iron-boron CoFeB, which generates strong perpendicular magnetic anisotropy (PMA) with the tunneling barrier layer to maintain the magnetization direction and provides a reference for the free layer;

[0058] The tunneling barrier layer is made of magnesium oxide MgO, which is used to generate a tunneling effect to transmit spin signals;

[0059] The free layer is made of semi-metallic material Heusler alloy cobalt iron aluminum Co 2 Composed of FeAl, it produces perpendicular magnetic anisotropy (PMA) with the tunneling barrier layer. Due to its small magnetic damping and high spin polarizability, it can freely flip under the action of spin transfer torque, and flip low current;

[0060] The buffer layer is made of metal tantalum Ta. When the thickness is 0.4 nanometers, ferromagnetic coupling is shown between the...

Embodiment 3

[0065] Example 3, such as Figure 7 The magnetic tunnel junction structure shown is similar to that of Embodiment 2.

[0066] The reference layer is composed of a mixed metal material cobalt-iron-boron CoFeB, which generates strong perpendicular magnetic anisotropy (PMA) with the tunneling barrier layer to maintain the magnetization direction and provides a reference for the free layer;

[0067] The tunneling barrier layer is made of magnesium oxide MgO, which is used to generate a tunneling effect to transmit spin signals;

[0068] The free layer is made of semi-metallic material Heusler alloy cobalt iron aluminum Co 2 Composed of FeAl, it produces perpendicular magnetic anisotropy (PMA) with the tunneling barrier layer. Due to its small magnetic damping and high spin polarizability, it can freely flip under the action of spin transfer torque, and flip low current;

[0069] The buffer layer is made of metal tantalum Ta. When the thickness is 0.4 nanometers, ferromagnetic c...

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Abstract

A kind of spin-transfer torque magnetic storage unit, it is characterized in that the magnetic tunnel junction of this magnetic storage unit is based on perpendicular magnetic anisotropy (PMA), in classical magnetic tunnel junction namely free layer, reference layer and tunnel barrier layer three Based on the layer structure, a buffer layer, a top magnetic layer and a top non-magnetic layer are added. The magnetic tunnel junction of the magnetic memory unit is composed of a reference layer, a tunnel barrier layer, a free layer, a buffer layer, a top magnetic layer and a top non-magnetic layer from bottom to top. The novel magnetic tunnel junction provided by the invention will effectively improve the thermal stability of data storage while keeping the flip current at a low level. It has a significant effect on improving the stability of the magnetic storage unit, reducing storage power consumption, and prolonging the read and write life of the storage unit.

Description

【Technical field】 [0001] The invention relates to a spin transfer torque magnetic storage unit, the core of which is a magnetic tunnel junction structure based on the spin transfer torque effect, that is, STT-MTJ, which belongs to the technical field of non-volatile memory. 【Background technique】 [0002] The core storage unit of Magnetic Random Access Memory (MRAM) is called Magnetic Tunnel Junction (MTJ), and its classic structure is composed of three layers of metal films. The middle layer is called the tunneling barrier layer, on which is a free layer made of ferromagnetic material, whose magnetization direction can be flipped freely; below it is a reference layer made of ferromagnetic material, whose magnetization direction is fixed. Due to the free flipping of the free layer, the two layers of ferromagnetic metals in this structure will produce two states: parallel and antiparallel. When the free layer is parallel to the reference layer, the magnetic tunnel junction e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H01L27/22
CPCH10B61/00H10N50/85H10N50/10
Inventor 王乐知张博宇赵巍胜
Owner BEIHANG UNIV
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