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Phase change memory and method of forming the same

A phase-change memory and phase-change layer technology, which is applied to electrical components and other directions, can solve the problems affecting the performance of the phase-change memory and the resistance change of the phase-change layer, and achieve the effect of avoiding the impact and improving the performance.

Active Publication Date: 2018-06-01
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, air gaps often appear in the phase change layer formed by the prior art, which causes the resistance of the phase change layer to change, thereby affecting the performance of the phase change memory.

Method used

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  • Phase change memory and method of forming the same

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Embodiment Construction

[0032] As mentioned in the background art, air gaps appear in the phase change layer of the phase change memory formed in the prior art, which affects the performance of the phase change memory.

[0033] In the prior art, after the phase change layer is formed, an etch stop layer and a dielectric layer are usually formed on the phase change layer, and then the dielectric layer and the etch stop layer are etched to form via holes connecting the phase change layer, and then the A top electrode is formed within the via hole. In the prior art, a plasma deposition process is usually used to form the etch stop layer and the dielectric layer, so as to form relatively high-quality materials for the etch stop layer and the dielectric layer, and it is beneficial to control the thermal budget of the deposition process. However, in the process of plasma deposition, the energy of the plasma is large, and the charges generated during the plasma movement will cause the phase change layer to ...

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Abstract

A phase-change memory and a method for forming the same, the method for forming the phase-change memory comprises: providing a substrate; forming a phase-change layer covering part of the surface of the substrate; forming an etch stop layer covering the substrate and the phase-change layer; A semiconductor charge adsorption layer is formed on the surface of the etching stop layer; a dielectric layer covering the semiconductor charge adsorption layer is formed; the dielectric layer, the semiconductor charge adsorption layer and the etching stop layer are etched to form a top through hole on the phase change layer; A top electrode is formed within the top via. The method can improve the performance of the formed phase change memory.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase-change memory and a forming method thereof. Background technique [0002] The phase change memory (Phase Change Random Access Memory, PCRAM) technology is established based on the idea that the phase change film is applied to the phase change storage medium. As an emerging non-volatile storage technology, phase change memory has great advantages over flash memory in many aspects such as read and write speed, read and write times, data retention time, unit area, and multi-value realization. Become the focus of current non-volatile memory technology research. [0003] In phase-change memory, the storage value of the memory can be changed by heat-treating the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or an amorphous state due to the heating effect of an applied electric curr...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 李志超伏广才
Owner SEMICON MFG INT (SHANGHAI) CORP