An electron beam collimating device and an electron beam collimating system
A technology of electron beam and electron beam emission, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., and can solve problems such as poor collimation effect
Active Publication Date: 2018-09-11
SUZHOU UNIV
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[0005] The purpose of the present invention is to provide an electron beam collimation device and an electron beam collimation system to solve the problem of poor collimation effect in the prior art when using a semiconductor quantum well structure to realize electron beam collimation
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[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0021] An embodiment of the present invention provides an electron beam collimation device, which may specifically be an electron beam collimation transistor, and may include a collimation module, which includes three layers of Weyl semimetals stacked together Thin film, the two Weyl semimetal films on both sides of the three-layer Weyl semimetal film are the same film, and the Weyl node energy of the Weyl semimetal film in the middle and the Weyl semimetal fil...
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The invention provides an electron beam collimation device and an electron beam collimation system. The electron beam collimation device comprises a collimation module, wherein the collimation module comprises three layers of Weyl semi-metal thin films laminated together, the two layers of Weyl semi-metal thin films, arranged on the two sides, of the three layers of Weyl semi-metal thin films are same thin films, the Weyl node energy of the Weyl semi-metal thin film arranged at the middle is different from those of the Weyl semi-metal thin films arranged on the two sides, electrons which are incident to the collimation module in a way perpendicular to the Weyl semi-metal thin films and of which the energy is within a preset energy range acquire electrons of which transverse momentum is within a preset momentum range and are then emitted out, thus, the electrons incident perpendicular to the Weyl semi-metal thin films acquires the electrons of which transverse momentum is within the preset momentum range and are further emitted out, the preset momentum range is 0 or is approximate to 0, the emitted electrons cannot depart from an original rail to move under the influence of the transverse momentum, and the collimation effect is excellent.
Description
technical field [0001] The invention relates to the technical field of semiconductors, and more specifically, to an electron beam collimation device and an electron beam collimation system. Background technique [0002] In traditional semiconductor materials, the semiconductor quantum well structure is mainly used to achieve electron beam collimation. Specifically, the electrons are confined in the channel of the nanometer-sized semiconductor quantum well structure, so that the electrons can only move along the channel, so that The purpose of electron beam collimation transmission. [0003] However, due to quantum mechanical effects of electrons, electrons always have a finite transverse momentum. When the electron beam is transmitted in the semiconductor quantum well structure, it can achieve the collimation effect, but after it exits the semiconductor quantum well structure, due to its lateral momentum, its motion direction will deviate from the original orbit to a certai...
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IPC IPC(8): H01L29/02H01L21/04
CPCH01L21/04H01L29/02
Inventor 尤文龙王雪峰
Owner SUZHOU UNIV