Semiconductor light emitting chip

Abstract

The invention provides a semiconductor light emitting chip. The semiconductor light emitting chip comprises a substrate, wherein a semiconductor stacked layer at least comprising an n type conductive layer, a light emitting layer and a p type conductive layer is formed on the first surface of the substrate; at least an n type electrode slot position for exposing a part of the n type conductive layer is formed in the surface of the semiconductor stacked layer; the partial or total exposed and conductive surface and side faces of the semiconductor light emitting chip are coated with at least an insulating layer; at least a p type exposed electrode and at least an n type exposed electrode are arranged on the surface of the insulating layer; the p type electrode and the n type electrode pass through the insulating layer to be conductively connected with the p type conductive layer and the n type conductive layer respectively; a p type welding pad is arranged in the position of the p type electrode exposed in the surface of the insulating layer; an n type welding pad is arranged in the position of the n type electrode exposed in the surface of the insulating layer; and at least one p type welding pad and / or at least one n type welding pad extends towards the outward side surface of the semiconductor light emitting chip to form the corresponding welding pads. The semiconductor light emitting chip is convenient to weld, high in welding adhesion, low in electrical resistance and thermal resistance, and low in manufacturing cost.

Description

technical field [0001] The invention relates to a semiconductor light emitting chip, and further relates to a semiconductor light emitting chip suitable for reflow soldering. Background technique [0002] With the improvement of luminous efficiency and the reduction of manufacturing cost of semiconductor light-emitting chips, semiconductor light-emitting chips have been widely used in fields such as backlight, display and lighting. [0003] In the existing semiconductor light-emitting chips, n-type pads and p-type pads are arranged on the surface of the semiconductor stack, so the surface of the semiconductor stack needs a certain surface area for the placement of the pads. With the continuous shrinking of the size of semiconductor light-emitting chips, the surface area of ​​n-type pads, p-type pads, and metal-based heat-conducting pads is getting smaller and smaller, which not only makes reflow soldering difficult, but also leads to too small a soldering contact area. , In...

AI Technical Summary

Problems solved by technology

As the size of semiconductor light-emitting chips continues to shrink, the surface area of ​​the n-type pads, p-type pads, and metal-based heat-conducting pads is getting smaller and smaller, which not only makes reflow soldering difficult, but also leads to too small a soldering contact area. , Insufficient thrust, large thermal resistance and other problems, there are essential defects in the manufacture of small-sized and high-current semiconductor light-emitting chips

[0004] In addition, with the expansion of LED applications, semiconductor light-emitting chips with double-sided light emission are required in some occasions. Traditional chip pads often need to occupy one surface of the chip, which cannot meet the requirements of double-sided light emission, which limits the application of the chip.

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