Silicon-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and preparation

Abstract

The invention provides a silicon-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and preparation thereof, and relates to a sensor. The sensor has a silicon-glass-silicon sandwich structure. A pressure sensor is integrated on a silicon-based pressure-sensitive film of the upper layer. A temperature sensor is integrated on a silicon substrate of the bottom part. The silicon substrate and the upper layer are isolated by a glass framework. The manufacturing method comprises the steps that the silicon substrate is prepared; the silicon-based pressure-sensitive film is prepared; a sandwich structure cavity is formed by the silicon substrate, the silicon-based pressure-sensitive film and the glass framework through bonding; the substrate layer of an SOI wafer is etched with the buried silicon oxide layer in the SOI wafer acting as a corrosion auto-stop layer so that the device layer of the SOI wafer is remained to act as the silicon-based pressure-sensitive film of the pressure sensor; four electrode regions are formed on the silicon-based pressure-sensitive film through etching, and the etching regions are arranged above the electrode regions of the temperature sensor and the pressure sensor with the bonding interface of the glass framework and the silicon-based pressure-sensitive film and the inlaid electrodes in the silicon-based pressure-sensitive film acting as the etching stop layer respectively; and array devices are split and then single devices are obtained.

Description

technical field [0001] The invention relates to a sensor, in particular to a silicon-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and a manufacturing method thereof. Background technique [0002] Wireless passivity is a major development trend of sensors. Sensors do not require power supply or electrical connection with the outside world, which greatly facilitates the sensing requirements in some special environments, such as closed environments, high-speed rotating objects, and strong electromagnetic fields. conditions and other environments. Traditional piezoresistive pressure sensors characterize changes in pressure based on changes in electrical resistance. The piezoresistive pressure sensor requires power supply and wire connection, which limits its application range, and the accuracy of pressure measurement depends on the sensitivity of the external circuit to resistance changes, and its accuracy is generally not high. Surf...

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Problems solved by technology

Therefore, if the SAW pressure sensor is not properly packaged and compensated for variables such as environmental changes and disturbances, the lifetime and measurement accuracy of the sensor will be affected

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