High-voltage semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing the on-resistance of transistors, increasing the size of the chip area, and unfavorable performance of P-type high-voltage semiconductor devices, so as to reduce the electric field density. The effect of on-resistance
Active Publication Date: 2016-07-20
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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However, this will increase the size of the device, increase the chip area and increase the on-resistance (Ron) of the transistor.
Furthermore, since the mobility of holes (holes) is lower than that of electrons, the on-resistance of the P-type high-voltage semiconductor device will be higher than that of the N-type high-voltage semiconductor device, which is not conducive to the P-type high-voltage semiconductor device. performance improvement
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[0048] The high-voltage semiconductor device of the present invention will be described in detail below. It should be appreciated that the following description provides many different embodiments or examples for implementing different aspects of the invention. The specific components and arrangements described below are intended to briefly describe the present invention. Of course, these are only examples rather than limitations of the present invention. Furthermore, repeated reference numerals or designations may be used in different embodiments. These repetitions are only for the purpose of simply and clearly describing the present invention, and do not represent any relationship between the different embodiments and / or structures discussed. Furthermore, when it is mentioned that a first material layer is located on or above a second material layer, it includes the situation that the first material layer is in direct contact with the second material layer. Alternatively,...
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The invention provides a high-voltage semiconductor device and a manufacturing method thereof. The high-voltage semiconductor device comprises a substrate, an epitaxial layer, a gate structure, a first conductive type high-voltage well region, a second conductive type high-voltage well region, a source region, a drain region and a stack structure, wherein the epitaxial layer is arranged on the substrate and has a first conductive type; the gate structure is arranged on the epitaxial layer; the first conductive type high-voltage well region and the second conductive type high-voltage well region are arranged in the epitaxial layer at two sides of the gate structure respectively; the first conductive type is different from the second conductive type; the source region and the drain region are arranged in the epitaxial layer at two sides of the gate structure; the stack structure is arranged between the gate structure and the drain region and comprises a barrier layer, an insulating layer and a conductive layer; the insulating layer is arranged on the barrier layer; and the conductive layer is arranged on the insulating layer and is electrically connected with the source region or the gate structure. Through the gate structure comprising the conductive layer, the electric field intensity of a channel in the epitaxial layer can be reduced, so that the on-resistance of the high-voltage semiconductor device is reduced.
Description
technical field [0001] The present invention relates to a semiconductor device and its manufacturing method, and in particular to a high-voltage semiconductor device and its manufacturing method. Background technique [0002] High-voltage semiconductor device technology is suitable for high-voltage and high-power integrated circuits. Conventional high-voltage semiconductor devices, such as vertically diffused metal oxide semiconductor (VDMOS) transistors and horizontal diffused metal oxide semiconductor (LDMOS) transistors, are mainly used in the field of device applications above 18V. The advantage of high-voltage device technology is that it is cost-effective and easily compatible with other manufacturing processes. It has been widely used in the fields of display driver IC components, power supplies, power management, communications, automotive electronics, or industrial control. [0003] High-voltage semiconductor devices use a gate voltage to create a channel and contr...
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IPC IPC(8): H01L29/43H01L21/28
Inventor 罗宗仁刘兴潮陈巨峰周苇俊
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION