High-voltage semiconductor device and manufacturing method thereof

Abstract

The invention provides a high-voltage semiconductor device and a manufacturing method thereof. The high-voltage semiconductor device comprises a substrate, an epitaxial layer, a gate structure, a first conductive type high-voltage well region, a second conductive type high-voltage well region, a source region, a drain region and a stack structure, wherein the epitaxial layer is arranged on the substrate and has a first conductive type; the gate structure is arranged on the epitaxial layer; the first conductive type high-voltage well region and the second conductive type high-voltage well region are arranged in the epitaxial layer at two sides of the gate structure respectively; the first conductive type is different from the second conductive type; the source region and the drain region are arranged in the epitaxial layer at two sides of the gate structure; the stack structure is arranged between the gate structure and the drain region and comprises a barrier layer, an insulating layer and a conductive layer; the insulating layer is arranged on the barrier layer; and the conductive layer is arranged on the insulating layer and is electrically connected with the source region or the gate structure. Through the gate structure comprising the conductive layer, the electric field intensity of a channel in the epitaxial layer can be reduced, so that the on-resistance of the high-voltage semiconductor device is reduced.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of fabricating the same, and more particularly, to a high-voltage semiconductor device and a method of fabricating the same. Background technique [0002] High-voltage semiconductor device technology is suitable for high-voltage and high-power integrated circuits. Conventional high-voltage semiconductor devices, such as vertically diffused metal oxide semiconductor (VDMOS) transistors and horizontally diffused metal oxide semiconductor (LDMOS) transistors, are mainly used in device applications above 18V. The advantages of high-voltage device technology are that it is cost-effective and easily compatible with other manufacturing processes. It has been widely used in display driver IC components, power supplies, power management, communications, automotive electronics or industrial control. [0003] High voltage semiconductor devices use the gate voltage to create the channel and cont...

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Problems solved by technology

However, this will increase the size of the device, increase the chip area and increase the on-resistance (Ron) of the transistor.

Furthermore, since the mobility of holes (holes) is lower than that of electrons, the on-resistance of the P-type high-voltage semiconductor device will be higher than that of the N-type high-voltage semiconductor device, which is not conducive to the P-type high-voltage semiconductor device. performance improvement

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