A Complementary Output Circuit of High Power Field Effect Transistor without Source Resistor

Abstract

Provided is a high power field effect transistor complementary output circuit having no source resistance, mainly comprising a field effect transistor complementary output branch, a first field effect transistor bias branch, a second field effect transistor bias branch, a first voltage dividing transistor group branch, a second voltage dividing transistor group branch, a first voltage dividing transistor group bias branch, and a second voltage dividing transistor group bias branch. The first voltage dividing transistor group branch and the second voltage dividing transistor group branch can bear most of voltage and dissipated power, so as to remove the source resistance at an output end of the field effect transistor complementary output branch, achieve low output impedance, and have large power output capability, and high voltage resistant high power complementary output.

Description

technical field [0001] The invention relates to the field of complementary output circuits based on semiconductor elements, in particular to a high-power field-effect transistor complementary output circuit without source resistance, which adopts the design of no source resistance to reduce output impedance. Background technique [0002] The complementary output circuit is a common output circuit, especially in the output stage of the audio power amplifier, which is usually designed in combination with semiconductor components, such as field effect transistors and triodes. [0003] Among them, the field effect transistor is a voltage control element, which is easier to drive than the triode, so it is more favored by audio power amplifier designers in the recent new products. Large output power (such as pure class A output above 50 watts, or class A and B output of 70-700 watts or even higher) usually requires a very large current output capability. However, in the process o...

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Problems solved by technology

[0005] 2. The withstand voltage of high-current FETs is usually relatively low. According to the traditional complementary output design, the power supply voltage cannot be raised to the required voltage for high-power output.

It is necessary to select dozens of pairs of symbol requirements from thousands of pairs of transistors, which greatly increases the cost

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