Formation method of flash memory

Abstract

A method of forming flash memory. Wherein, the formation method of the flash memory includes: providing a semiconductor substrate, the semiconductor substrate includes a core region and a peripheral region; forming a plurality of discrete shallow trench isolation structures in the semiconductor substrate, two adjacent ones Grooves are formed between the shallow trench isolation structures; side walls are formed on both sides of the shallow trench isolation structures; a tunnel dielectric layer is formed at the bottom of the grooves; and a tunnel dielectric layer is formed in the grooves to fill the grooves. A recessed floating gate covers the sidewalls and the tunnel dielectric layer. The reliability of the flash memory formed by the forming method is improved.

Description

technical field The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a flash memory. Background technique Flash memory (Flash), also known as flash memory, has become the mainstream of non-volatile memory. According to different structures, flash memory can be divided into two types: NOR Flash and NAND Flash. Or non-flash memory is suitable for applications such as mobile phones or motherboards that need to record system codes because of its fast reading speed. And non-flash memory is especially suitable for multimedia data storage because of its high density and high writing speed. Another classification of flash memory can be divided into two categories: floating gate Flash (floating gate Flash) and charge-trapping flash (CTF, charge-trapping Flash). For the floating gate structure flash memory, due to the existence of the floating gate, the flash memory can complete the reading, writing and erasing of information, ev...

AI Technical Summary

Problems solved by technology

However, the flash memory formed by the existing method of forming flash memory has reliability problems

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