A method for calibrating the actual temperature of the substrate surface in molecular beam epitaxy
A molecular beam epitaxy, substrate surface technology, applied in thermometers, thermometer test/calibration, measurement devices, etc., can solve the problems of large test errors, increased equipment complexity, cost, and difficulties
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Embodiment 1
[0032] This embodiment provides a GaAs substrate as an example to illustrate the method of calibrating the actual temperature of the GaAs substrate surface in molecular beam epitaxy, such as figure 2 As shown, the method steps are as follows:
[0033] (1) Test the thermocouple temperature T during GaAs substrate analysis 1 , taking 680°C as an example;
[0034] (2) After the substrate is analyzed, the temperature is lowered to 300°C, and the substrate surface reconstruction has been confirmed to have changed from (2×4) to (4×4) by RHEED observation, and the As beam source used to protect the substrate is turned off, and then the temperature is raised. The heating rate is 0.1°C / s, observe the change of the substrate surface reconstruction when the temperature rises, and record the thermocouple temperature T when the surface reconstruction recovers from (4×4) to (2×4) 2 , taking 440°C as an example;
[0035] (3) Lower the substrate to room temperature, turn on the As beam so...
Embodiment 2
[0041] This embodiment provides an InP substrate as an example to illustrate the method of calibrating the actual temperature of the InP substrate surface in molecular beam epitaxy, such as Figure 4 As shown, the method steps are as follows:
[0042] (1) Test the thermocouple temperature T when analyzing the InP substrate 1 , taking 530°C as an example;
[0043](2) After substrate analysis, cool down to 250°C, observe with RHEED to confirm that the substrate surface reconstruction has changed from (2×4) to (4×4), turn off the P beam source used to protect the substrate, and then raise the temperature, The heating rate is 0.1°C / s, observe the change of the substrate surface reconstruction when the temperature rises, and record the thermocouple temperature T when the surface reconstruction recovers from (4×4) to (2×4) 2 , taking 350°C as an example;
[0044] (3) Lower the substrate to room temperature, turn on the P beam source to the maximum, and leave it for more than half...
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