A method for calibrating the actual temperature of the substrate surface in molecular beam epitaxy
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A molecular beam epitaxy, substrate surface technology, applied in thermometers, thermometer test/calibration, measurement devices, etc., can solve the problems of large test errors, increased equipment complexity, cost, and difficulties
Active Publication Date: 2018-07-24
无锡中科德芯感知科技有限公司
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This has caused great difficulties for researchers to accurately calibrate the actual temperature of the substrate surface
Although some molecular beam epitaxy equipment is also equipped with an infrared thermometer to test the surface temperature of the sample, on the one hand, it is affected by the distance and angle, and the measurement error is relatively large. On the other hand, it also increases the complexity and cost of the equipment.
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Embodiment 1
[0032] This embodiment provides a GaAs substrate as an example to illustrate the method of calibrating the actual temperature of the GaAs substrate surface in molecular beam epitaxy, such as figure 2 As shown, the method steps are as follows:
[0033] (1) Test the thermocouple temperature T during GaAs substrate analysis 1 , taking 680°C as an example;
[0034] (2) After the substrate is analyzed, the temperature is lowered to 300°C, and the substrate surface reconstruction has been confirmed to have changed from (2×4) to (4×4) by RHEED observation, and the As beam source used to protect the substrate is turned off, and then the temperature is raised. The heating rate is 0.1°C / s, observe the change of the substrate surface reconstruction when the temperature rises, and record the thermocouple temperature T when the surface reconstruction recovers from (4×4) to (2×4) 2 , taking 440°C as an example;
[0035] (3) Lower the substrate to room temperature, turn on the As beam so...
Embodiment 2
[0041] This embodiment provides an InP substrate as an example to illustrate the method of calibrating the actual temperature of the InP substrate surface in molecular beam epitaxy, such as Figure 4 As shown, the method steps are as follows:
[0042] (1) Test the thermocouple temperature T when analyzing the InP substrate 1 , taking 530°C as an example;
[0043](2) After substrate analysis, cool down to 250°C, observe with RHEED to confirm that the substrate surface reconstruction has changed from (2×4) to (4×4), turn off the P beam source used to protect the substrate, and then raise the temperature, The heating rate is 0.1°C / s, observe the change of the substrate surface reconstruction when the temperature rises, and record the thermocouple temperature T when the surface reconstruction recovers from (4×4) to (2×4) 2 , taking 350°C as an example;
[0044] (3) Lower the substrate to room temperature, turn on the P beam source to the maximum, and leave it for more than half...
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Abstract
The invention relates to a method for calibrating substrate surface actual temperature in molecular beam epitaxy. The method comprises the steps of (1), testing a thermocouple temperature T1 in substrate analysis; (2) performing temperature reduction after substrate analysis, after surface reconstruction change is observed and confirmed, stopping a beam source for protecting the substrate, performing temperature increase, observing and recording a thermocouple temperature T2 when the substrate surface reconstruction is restored; (3), reducing the temperature of the substrate to the room temperature, covering a noncrystal layer on the substrate surface, performing temperature increase, observing and recording a thermocouple temperature T3 in desorption of the noncrystal layer; and (4), according to the surface real temperature values of the substrate when the thermocouple temperatures are respectively T1, T2 and T3, establishing a relationship between the substrate surface real temperature and the thermocouple temperature by means of a B spline function. The method can be used for accurately acquiring the actual temperature of the substrate surface in molecular beam epitaxy and has advantages of high speed, simple operation and high accuracy. The method has high application value in researching molecular beam epitaxy material growth dynamics and accurately controlling growth of micro-nano structure material.
Description
technical field [0001] The invention belongs to the field of semiconductor material growth, in particular to a method for calibrating the actual temperature of a substrate surface in molecular beam epitaxy. Background technique [0002] Molecular beam epitaxy is a method of material growth in an ultra-high vacuum environment, which can prepare ultra-thin layer materials and alternately grow different components and doped films to form ultra-thin quantum structure materials. In the molecular beam epitaxy growth process, the thermal atomic beam or molecular beam of one or several components is sprayed onto the heated substrate surface, reacts with the substrate surface, and deposits a thin film material. In molecular beam epitaxy, the temperature of the substrate surface is one of the most important material growth parameters. By adjusting the temperature of the substrate surface, the migration rate and surface free energy of atoms or molecules on the substrate surface can be...
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