FinFET device and manufacturing method thereof, and electronic apparatus

Abstract

The present invention provides a FinFET device, a manufacturing method thereof, and an electronic device. The method includes: providing a semiconductor substrate, on which a plurality of fins are formed, and a hard mask layer is formed on the top of the fins; forming A layer of liner oxide to cover the surface of the semiconductor substrate, the sidewalls of the fins, and the sidewalls and top of the hard mask layer; a layer of isolation material is deposited to completely fill the gaps between the fins; portions of the fins are exposed , and then form fins with a specific height; sequentially implement well region implantation and channel stop implantation to adjust threshold voltage and control source/drain punchthrough. According to the present invention, by implementing channel stop implantation in which the implanted ions are carbon ions, nitrogen ions or a combination of the two, the source/drain punchthrough suppression capability of the FinFET can be effectively enhanced.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a FinFET device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, the improvement of integrated circuit performance is mainly achieved by continuously shrinking the size of integrated circuit devices to increase its speed. Currently, as the semiconductor industry has advanced to nanotechnology process nodes in pursuit of high device density, high performance, and low cost, the fabrication of semiconductor devices is limited by various physical limits. [0003] As the dimensions of CMOS devices continue to shrink, manufacturing and design challenges have prompted the development of three-dimensional designs such as Fin Field Effect Transistors (FinFETs). Compared with the existing planar transistors, FinFET is an advanced semiconductor device for 20nm and below process nodes...

AI Technical Summary

Problems solved by technology

If the implanted ions for channel stop implantation are boron ions or boron fluorine ions, boron ions or boron fluoride ions are easy to diffuse to the isolation structure during the

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