Three-dimensional non-volatile nor-type flash memory
A non-volatile storage and flash memory technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of NAND flash memory that cannot provide random access function storage units and cannot operate independently.
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[0016] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.
[0017] The invention provides the design of a three-dimensional non-volatile NOR flash memory device that can increase storage density. The main elements include: (1) a basic NOR memory group in which memory cells (i.e., FETs) are stacked in a direction not parallel to the substrate plane and circuits are connected in parallel (i.e., share source and drain) to achieve high storage density; (2 ) basic NOR memory group, wherein each memory cell (i.e. FET) is stacked along the direction parallel to the substrate plan...
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